Abstract
This work reports the effects of Ag and Sn capping layers and their method of deposition by electroless and electrochemistry on the oxidation stability in ambient air of the electrodeposited Cu film used as front side contacts in the Si-solar cells. The effect of the deposition solution of Ag and Sn capping layers on the Cu oxidation stability was also investigated by using two different solutions for the deposition of the Ag capping layer, one acidic solution (AgNO3/HF) and the other alkaline solution (AgNO3/(NH4)2SO4/NH4OH), whereas the Sn capping layer was deposited using an acidic solution (SnCl2/HCl). Optical microscopy, SEM, XRD, XPS and sheet resistance measurements have been employed to characterize the prepared samples and examine their oxidation stability. It has been shown that the Ag and Sn capping layers improved the oxidation stability of the Cu film as well as its adhesion with the Si substrate. However, the electrodeposited Ag and Sn layers induced formation of whiskers, which have a detrimental effect on the reliability of the Si-solar cells. This study revealed that the Ag layer deposited by electroless using an acidic solution (AgNO3/HF) can be considered a promising candidate for the use as a capping layer for the Cu contacts in Si-solar cells.
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The authors gratefully acknowledge the financial supports from the Directorate-General for Scientific Research and Technological Development (DGRSDT), Algeria and Research Centre in Semiconductors Technology for Energetics (CRTSE), Algeria.
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OD.: Conceptualization, Methodology, Investigation, Visualization, Data curation and Writing—original draft. AM: Supervision. SC: Preparation of deposition solutions. CY and MB: Electrochemical deposition assistance and some discussions. SM: POCl3 diffusion method and some discussions.
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Djema, O., Moussi, A., Chaouchi, S. et al. Ag and Sn capping layers for stabilizing Cu solar cell contacts against oxidation in air: effects of method and solution of deposition. J Mater Sci: Mater Electron 35, 91 (2024). https://doi.org/10.1007/s10854-023-11794-9
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DOI: https://doi.org/10.1007/s10854-023-11794-9