Abstract
In order to investigate the structural and electrical properties of basaltic glass modified by ZnO, ZnO-modified basaltic glasses were prepared by the conventional melt-cooling method. The relationship between glass structure and electrical properties was investigated using XRD, FT-IR, Raman, DSC, dielectric properties tester and volume resistance tester. The results show that when ZnO doping is lower than 6 wt%, it does not lead to basalt glass crystallization. The ZnO doping shows roughly a linear relationship with the volume resistivity, but the trend is not obvious. The optimum doping of ZnO was 4 wt%, at this doping level, the glass network was the most connected with the lowest values of dielectric constant (6.5) and dielectric loss (0.005). This finding provides theoretical support for the replacement of E-glass fibers by basalt fibers in terms of dielectric properties.
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Funding
This work was supported by grants from the Hebei Provincial Science and Technology Department (206Z1501G), the Chinese Academy of Sciences Foundation for Poverty Alleviation (81832390), the academician workstation construction grant from Hebei Dipaogu Incubator Co., Ltd (204790416 H), the science and technology project of Hebei Education Department (BJK2023040) and the Hebei University of Geosciences Doctoral Research Start-up Fund (BQ2019008).
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LZ wrote the first draft of the manuscript and completed all the experimental work with ZY, JZ collected and analyzed the data, YL and LJ revised the manuscript, CY and CL conceived and designed the work, and HL approved the final version. All authors expressed their views on the writing of the manuscript and all authors read and approved the final manuscript.
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Zeng, L., Yuan, Z., Zhao, J. et al. The structural and electrical properties of basaltic glasses modified by ZnO. J Mater Sci: Mater Electron 34, 2305 (2023). https://doi.org/10.1007/s10854-023-11765-0
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DOI: https://doi.org/10.1007/s10854-023-11765-0