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Isolation of current–voltage characteristics for each layer of a two-layer dielectric using the example of Al–Al2O3–Ta2O5–Ni diodes with different tantalum oxide thicknesses

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Abstract

The metal–insulator–metal diodes have been investigated in which the dielectric consists of two layers: tantalum oxide and alumina, and alumina arises as a result of the interaction of aluminum with tantalum oxide during the deposition of a contact. A technique has been developed for analyzing a diode with a two-layer dielectric in which the thickness of one dielectric layer changes, while the other remains constant. For this case, an algorithm is proposed for dividing the voltage drop on each layer separately and calculating the current–voltage characteristics for each of the layers connected in series. After that, using known methods, it is possible to determine both the characteristics of the material and potential barriers at the interface between the metal and the dielectric.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

This work was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. 0004-2022-0004. The investigations were performed in the Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences (INME RAS) using Large Scale Research Facility Complex for Heterogeneous Integration Technologies and Silicon+Carbon Nanotechnologies.

Funding

This work was funded by Ministry of Science and Higher Education of the Russian Federation, 0004-2022-0004.

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  1. Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences (INME RAS), Leninskiy Prospect, 32A, Moscow, Russia, 119991

    Sergey V. Bulyarskiy, Alexander V. Lakalin, Andrey P. Orlov & Kristina I. Litvinova

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SVB contributed toward conceptualization, methodology, supervision, and writing—reviewing and editing. AVL contributed toward software, formal analysis, and writing—original draft. APO contributed toward investigation and formal analysis. KIL contributed toward investigation.

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Correspondence to Sergey V. Bulyarskiy.

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Bulyarskiy, S.V., Lakalin, A.V., Orlov, A.P. et al. Isolation of current–voltage characteristics for each layer of a two-layer dielectric using the example of Al–Al2O3–Ta2O5–Ni diodes with different tantalum oxide thicknesses. J Mater Sci: Mater Electron 34, 2173 (2023). https://doi.org/10.1007/s10854-023-11592-3

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