Abstract
The utilization of solar energy is an essential aspect in order to sustain in the energy crisis situation. Semiconductor based photoelectrochemical (PEC) cells are used for it. Herein, a binder free approach was employed for the synthesis of CdSe thin films on stainless steel substrate and effect of post annealing (350–500 K) on physicochemical as well as photoelectrochemical properties were investigated. The characterization showed that CdSe thin films crystallized in cubic crystal structure with spherical granular morphology with optical band gap of 1.76 eV. The effect of post annealing on CdSe thin films is further tested by examining their PEC properties. Thin film CdSe electrode annealed at temperature 400 K showed highest fill factor (FF) and efficiency (η) of 0.32 and 1.54%, respectively. In addition, electrochemical impedance spectroscopy (EIS) study showed superior charge transfer properties.
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Acknowledgements
R. P. Nikam acknowledge SARTHI: Chhatrapati Shahu Maharaj Research Training and Human Development Institute, Government of Maharashtra, India for awarding the Junior Research Fellowship (JRF).
Funding
This study was funded by Chhatrapati Shahu Maharaj Research Training and Human Development Institute (JRF), D.Y. Patil Education Society Institution Deemed to be University Kolhapur (DYPES/DU/RD/2022/2344).
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Mr. RPN carried out an investigation and formal analysis, data curation, and original draft writing, Mr. VCL, provided resources and formal analysis. Mr. SDK, Miss. PPB, and Dr. JLG carried out modification, creation, and presentation and visualization of the manuscript. Prof. CDL carried out funding acquisition, administration, supervision, manuscript editing. All persons made substantial contributions to the work reported in the manuscript.
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Nikam, R.P., Lokhande, V.C., Khot, S.D. et al. Effect of post annealing on chemisynthesized cadmium selenide (CdSe) thin films: physicochemical and photoelectrochemical properties. J Mater Sci: Mater Electron 34, 1940 (2023). https://doi.org/10.1007/s10854-023-11312-x
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DOI: https://doi.org/10.1007/s10854-023-11312-x