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A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements

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Abstract

In this study, both the Au/(ZnCdS:GO(1:1) doped PVP)/n-Si and Au/(ZnCdS:GO(1:0.5) doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were fabricated onto the same n-Si wafer to determine effect of the rates of them using the I–V and C/G-V measurements. The basic electrical-parameters of them such as reverse-saturation current (Is), ideality-factor (n), barrier-height (ΦB), rectification-ratio (RR), series/shunt resistances (RS, and Rsh) values, were calculated from the I–V data-based on thermionic-emission (TE) theory. The voltage dependence of surface -states profile was obtained from both the forward-bias I–V data (by considering voltage dependence of n, BH) and high–low frequency capacitance (CLF–CHF) methods for two SDs and were compared. These results indicate that SD2 has a lower leakage current and higher RR, Rsh, and BH than SD1 diode. On the other hand, the values of Nss with the same order (∼1012–1013 eV−1 cm2) for two SDs getting increases from the mid-gap of the semiconductor toward the bottom of the conduction band and change from region to region due to a particular density distribution of them in the bandgap. Both the voltage-dependent profile of Nss and Rs was also extracted from the C/G-V data by using Nicollian–Brews and high–low frequency capacitance method, respectively, and the values of them for SD2 are lower than the SD1 in the whole measured voltage range.

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Data availability

The datasets generated and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

The Scientific and Technological Research Council of TURKIYE (TUBITAK) supports this work with the research project number-121C396.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey

    Ç. Ş. Güçlü, E. Erbilen Tanrıkulu, A. Dere & Ş. Altındal

  2. Department of Electric and Energy, Vocational Scholl of Technical Science, Fırat University, 23119, Elazığ, Turkey

    E. Erbilen Tanrıkulu

  3. Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

    A. Dere & Y. Azizian-Kalandaragh

  4. Photonics Department, Applied Science Faculty, Gazi University, 06500, Ankara, Turkey

    A. Dere & Y. Azizian-Kalandaragh

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Contributions

All authors contributed approximately the same to the preparation of the samples and them interpretation and writing. ÇŞG Manufacturing, investigation, measurements, calculations, writing, reviewing & editing. EET Investigation, calculations, writing, reviewing & editing. AD Measurements & calculations. ŞA Review, editing & supervising. YAK Manufacturing, investigation & measurements.

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Güçlü, Ç., Tanrıkulu, E.E., Dere, A. et al. A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements. J Mater Sci: Mater Electron 34, 1909 (2023). https://doi.org/10.1007/s10854-023-11302-z

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