Abstract
In this study, undoped and (1%, 3%, 5%) Cd-doped ZnO thin films were produced on p-type Si substrates using the SILAR (successive ionic layer adsorption and reaction) technique at room temperature. The structural properties of both undoped and Cd-doped ZnO films were examined. Surface structural analysis of the fabricated samples was performed using SEM (scanning electron microscopy) and XRD (X-ray diffraction). It was determined that the thin films exhibited a hexagonal wurtzite structure with varying surface morphologies. Moreover, p–n junction diode structures were created using undoped Al/ZnO/p-Si/Al and %1, %3, %5 Cd-doped Al/Cd:ZnO/p-Si/Al configurations. The electrical properties of the samples were investigated through current–voltage (I–V) and current–time (I–t) measurements under different illumination intensities and in the dark. Utilizing the thermionic emission theory, the ideality factor (n), barrier height (Φb), and saturation current (I0) values of the samples were calculated. The results revealed an increase in reverse bias photocurrent with the increment of illumination intensity, indicating the light sensitivity of the samples. Additionally, I–t measurements were evaluated to investigate the photoresponse characteristics of the produced diodes, demonstrating an increase in current with higher illumination intensities. Furthermore, the series resistance (Rs) values of undoped and Cd-doped ZnO diodes were calculated using the Norde method, revealing values in the order of Ω. Based on the obtained data, it can be concluded that the electrical properties of ZnO diode structures vary with the amount of Cd dopant, and these diodes can be utilized in optoelectronic applications as photodiodes.
Similar content being viewed by others
Data availability
All data generated or analyzed during this study are included in this published article.
References
S. Guan, T. Zhan, L. Hao, S. Kurosu, T. Ukai, X. Zhao, T. Itoi, Y. Lu, J. Alloys Compd. 904, 164070 (2022)
J.C. Fan, K.M. Sreekanth, Z. Xie, S.L. Chang, K.V. Rao, Prog. Mater. Sci. 58, 874 (2013)
T. Zhang, M. Li, J. Chen, Y. Wang, L. Miao, Y. Lu, Y. He, Mater. Sci. Eng. R Rep. 147, 100661 (2022)
B. Amudhavalli, R. Mariappan, M. Prasath, J. Alloys Compd. 925, 166511 (2022)
A.B. Djuriić, A.M.C. Ng, X.Y. Chen, Prog. Quantum Electron. 34, 191 (2010)
A. López-Suárez, D. Acosta, C. Magaña, F. Hernández, J. Mater. Sci. Mater. Electron. 31, 7389 (2020)
N. Demirbilek, M. Kaya, F. Yakuphanoğlu, J. Fac. Eng. Archit. Gazi Univ. 38, 163 (2023)
A.B. Yadav, G. Rawat, B.S. Sannakashappanavar, Mater. Today Commun. 31, 103751 (2022)
M. Al-Rasheidi, F. Khan, A. Al-Ahmed, S. Rehman, F. Al-Sulaiman, Opt. Mater. (Amst). 126, 112144 (2022)
L. Dejam, S. Kulesza, J. Sabbaghzadeh, A. Ghaderi, S. Solaymani, Ș Țălu, M. Bramowicz, M. Amouamouha, A. Hossein, S. Shayegan, A. Hossein Sari, Results Phys. 44, 1 (2023)
E. Pál, V. Hornok, A. Oszkó, I. Dékány, Colloids Surfaces A Physicochem. Eng. Asp. 340, 1 (2009)
J.H. Kim, I.H. Yer, Ceram. Int. 42, 3304 (2016)
M. Soylu, Optik (Stuttg). 216, 164865 (2020)
B.A.H. Ameen, A. Yildiz, W.A. Farooq, F. Yakuphanoglu, SILICON 11, 563 (2019)
M. Soylu, A.G. Al-Sehemi, A. Dere, A.A. Al-Ghamdi, F. Yakuphanoglu, Micro Nanostruct. 165, 207190 (2022)
J. Zúñiga-Pérez, Mater. Sci. Semicond. Process. 69, 36 (2017)
P. Srinivasan, D. Prakalya, B.G. Jeyaprakash, J. Alloys Compd. 819, 152985 (2020)
A.A.A. Farag, A.M. Aboraia, H.E. Ali, V. Ganesh, H.H. Hegazy, A.V. Soldatov, H.Y. Zahran, Y. Khairy, I.S. Yahia, Opt. Mater. (Amst). 110, 110458 (2020)
M. Ravikumar, V. Ganesh, M. Shkir, R. Chandramohan, K.D. Arun Kumar, S. Valanarasu, A. Kathalingam, S. AlFaify, J. Mol. Struct. 1160, 311 (2018)
I.L.P. Raj, N. Chidhambaram, S. Saravanakumar, S. Sasikumar, S. Varadharajaperumal, D. Alagarasan, T. Alshahrani, M. Shkir, S. AlFaify, Optik (Stuttg). 241, 166406 (2021)
G. Turgut, D. Tatar, Optik (Stuttg). 145, 292 (2017)
R. López, G. Villa-Sánchez, I. Vivaldo de la Cruz, C. Encarnación-Gómez, V.H. Castrejón-Sánchez, A. Coyopol, J.E. Mastache, C. Leyva-Porras, Results Phys. 22, 1 (2021)
R. López, E. Vigueras-Santiago, A.R. Vilchis-Nestor, V.H. Castrejón-Sánchez, M.A. Camacho-López, N. Torres-Gómez, Results Phys. 7, 1818 (2017)
S.S. Ghosh, A. Sil, Thin Solid Films 756, 1 (2022)
A. Roy, M. Benhaliliba, Optik (Stuttg). 274, 170557 (2023)
T. Bi, Z. Du, S. Chen, H. He, X. Shen, Y. Fu, Appl. Surf. Sci. 614, 156240 (2023)
A. Tataroğlu, H. Aydın, A.A. Al-Ghamdi, F. El-Tantawy, W.A. Farooq, F. Yakuphanoglu, J. Electroceramics 32, 369 (2014)
N.M.S. Kaawash, M.Y.H. Thabit, D.I. Halge, V.N. Narwade, K.A. Bogle, Mater. Today Proc. 1, 1 (2023)
S. Pujar, G.K. Rao, Mater. Today Proc. 55, 56 (2022)
M. Thirumoorthi, S.S. Dhavud, V. Ganesh, T.H. Al Abdulaal, I.S. Yahia, D. Deivatamil, Opt. Mater. (Amst). 128, 112410 (2022)
T. Çorlu, I. Karaduman, M.A. Yildirim, A. Ates, S. Acar, High Temp. High Press. 46, 155 (2017)
H. Norde, J. Appl. Phys. 50, 5052 (1979)
Y.J. Zhai, J.H. Li, X. Fang, X.Y. Chen, F. Fang, X.Y. Chu, Z.P. Wei, X.H. Wang, Mater. Sci. Semicond. Process. 26, 225 (2014)
B. Altun, A. Ajjaq, A.O. Çağırtekin, I.K. Er, F. Sarf, S. Acar, Ceram. Int. 47, 27251 (2021)
S. Mondal, P. Mitra, Bull. Mater. Sci. 35, 751 (2012)
A.D. Acharya, S. Moghe, R. Panda, S.B. Shrivastava, M. Gangrade, T. Shripathi, D.M. Phase, V. Ganesan, Thin Solid Films 525, 49 (2012)
M.D. Angelin, S. Rajkumar, A.T. Ravichandran, J.P. Merlin, J. Phys. Chem. Solids 161, 110486 (2022)
F. Aslan, H. Esen, F. Yakuphanoglu, J. Alloys Compd. 789, 595 (2019)
S.M. Sze, K.K. Ng, Physics of Semiconductor Devices: Third Edition (Wiley, London, 2006)
N. Tugluoglu, S. Karadeniz, Curr. Appl. Phys. 12, 1529 (2012)
E. Serkan, N. Tuğluoğlu, New Mater. Compd. Appl. 5, 122 (2021)
M. Benhaliliba, Micro Nanostruct. 163, 107140 (2022)
Funding
This work was financially supported by the Scientific Research Projects Foundation of Gazi University (BAP FOA-2022-7389).
Author information
Authors and Affiliations
Contributions
ŞÇ: Project administration, Supervision, resources, investigation, writing-original draft, visualization, writing-review and editing, YŞ: Investigation, experiment, formal analysis, visualization, NT: Investigation, formal analysis, visualization, writing-original draft, writing-review and editing, HK: Resources, investigation, writing-original draft, visualization, writing-review and editing, NT; Resources, investigation, writing-original draft, visualization, writing-review and editing.
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Çavdar, Ş., Şahin, Y., Turan, N. et al. Structural and electrical characterization of Cd-doped ZnO thin films produced on p-type Si substrate by SILAR technique. J Mater Sci: Mater Electron 34, 1787 (2023). https://doi.org/10.1007/s10854-023-11134-x
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-023-11134-x