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The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

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Abstract

The frequency dependent electrical and dielectric properties of the Au/P3HT/n-Si metal-polymer-semiconductor (MPS) type Schottky barrier diode (SBD) has been investigated using admittance-voltage (C/G-V) measurements over the range of 10 kHz–1 MHz at room temperature. Experimental results show that the values of both C and G/w decrease with increasing frequency confirming that the charges at interface can easily follow an ac signal and yield excess capacitance, especially, at low frequency. The frequency dependent dielectric constant (ε′), dielectric loss (ε″), and loss tangent (tan δ) are obtained using C and G/w data at various voltages. The ε′ and ε″ values are found to be strongly dependent on both frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. The ac electrical conductivity (σac) tends to increase with both increasing frequency and voltage, as in the C-V and G-V values, indicating that both the interfacial polarization and surface states (Nss) are more effective at low frequencies and so yield an excess capacitance and conductance to the real value of them. Also, the electric modulus formalism of dielectric relaxation was studied to understand the nature of conductivity relaxation in P3HT. It was found that the frequency dependent real parts, M' and imaginary parts, M", of the electric modulus strongly change with both frequency and voltages.

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Data availability

The datasets analyzed during the current study are available from the corresponding author on reasonable request.

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Authors and Affiliations

  1. Department of Electronic and Automation, Vocational School of Higher Education, Ostim Technical University, 06374, Ankara, Turkey

    Esra Yükseltürk

  2. Department of Biomedical Equipment Technology, Vocational School of Technical Sciences, Başkent University, 06790, Ankara, Turkey

    Seda Bengi

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  1. Esra Yükseltürk
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All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by Esra Yükseltürk and Seda Bengi. The first draft of the manuscript was written by Esra Yükseltürk and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Seda Bengi.

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Yükseltürk, E., Bengi, S. The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD). J Mater Sci: Mater Electron 34, 1580 (2023). https://doi.org/10.1007/s10854-023-10983-w

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