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The role of vast off-stoichiometry of SnSe thin film on structural, morphological, optical, and electrical properties for photovoltaic applications

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Abstract

A layered chalcogenide material, tin monoselenide (SnSe), has recently garnered considerable interest in optoelectronics owing to its remarkable opto-electrical properties. Our goal in conducting this research is to better understand the SnSe vast off-stoichiometry ratio. The structural properties of all films examined by X-ray diffraction (XRD) confirmed formation of orthorhombic SnSe with a prominent (111) orientation peak. Raman spectroscopy revealed the successful formation of a single phase of α-SnSe under Sn-rich conditions. The calculated direct bandgap using Tauc’s plot is found to be increased from 1.37 eV (under Sn rich) to 1.68 eV (under Se-rich). Based on Hall measurement, largest carrier mobility (34.3 cm2V−1S−1) is found in Sn-rich SnSe conditions. The results show how off-stoichiometry-related imperfections have a significant impact on optoelectrical characteristics. And by adjusting the Sn/Se ratio, the conductivity type can be modified. Using this approach will undoubtedly result in an improvement in the overall performance of thin-film solar cells. This will enable the fabrication of extremely efficient SnSe homojunction solar cells.

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Data availability

The data sets generated during and/or analyzed during the current studies are available from the corresponding author on reasonable request.

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Acknowledgements

The authors would like to thank the Material Science Lab in the Department of Physics at Gurukula Kangri (deemed to be a university), Haridwar-249404, Uttarakhand, India, for providing the facilities needed for deposition and characterization.

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Authors and Affiliations

  1. Department of Physics, Gurukula Kangri (Deemed to Be University), Haridwar, 249404, India

    Prosenjit Sarkar,  Nisha & Pawan Kumar

  2. Department of Physics, University of Puerto Rico, San Juan, PR, 00931, USA

    Ram S. Katiyar

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  1. Prosenjit Sarkar
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  2. Nisha
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  3. Pawan Kumar
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  4. Ram S. Katiyar
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Contributions

Study conception and design contributed by all authors. Material preparation, data collection and analysis were performed by N and PS. The first draft of the manuscript was written by N and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Pawan Kumar.

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Sarkar, P., Nisha, Kumar, P. et al. The role of vast off-stoichiometry of SnSe thin film on structural, morphological, optical, and electrical properties for photovoltaic applications. J Mater Sci: Mater Electron 34, 1372 (2023). https://doi.org/10.1007/s10854-023-10805-z

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