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Effect of sintering temperature on properties of Ba (Cu1/2W1/2) O3 high dielectric ceramics

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Abstract

Ba (Cu1/2W1/2) O3 (BCW) ceramics were prepared and their dielectric properties were investigated for energy storage applications. A low pre-sintering temperature of 930 °C was used to achieve favorable grain crystallinity, and a sintering temperature of 1160 °C was used to obtain a high dielectric constant. A dielectric constant of 105 was observed at 10 Hz and 400 °C. Moreover, the BCW ceramics exhibited good microstructure and optimal temperature stability over a wide temperature range from − 100 to 500 °C, and the internal barrier layer capacitance mechanism was considered to be the reason for their high dielectric performance. The surfactant PEG was found to be the most effective in enhancing the dielectric properties of BCW ceramics. This study demonstrates the potential of this material for high-density energy storage applications.

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Funding

The authors gratefully acknowledge the funding of National Nature Science Foundation of China (NSFC, 51174160) and Natural Science Foundation of Shaanxi Province in China (101–221206).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Xi’an University of Technology, Xi’an, 710048, Shaanxi, China

    Juanjuan Wang, Bochao Xie & Xueliang Duan

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  1. Juanjuan Wang
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  2. Bochao Xie
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  3. Xueliang Duan
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Contributions

JW and BX: contributed to the conception and design of study. JW, BX, and XD: The materials preparation and data collection were performed. JW and BX The analysis and interpretation of data were done. BX and XD: The first draft of the manuscript were completed. JW: revised the manuscript critically for important intellectual content. All authors reviewed and approved the final manuscript.

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Correspondence to Juanjuan Wang.

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Wang, J., Xie, B. & Duan, X. Effect of sintering temperature on properties of Ba (Cu1/2W1/2) O3 high dielectric ceramics. J Mater Sci: Mater Electron 34, 1090 (2023). https://doi.org/10.1007/s10854-023-10484-w

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  • DOI: https://doi.org/10.1007/s10854-023-10484-w

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