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Porous silicon passivated with aluminum for photoluminescence enhancement and photodetector applications

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Abstract

The majority of optoelectronic devices based on porous silicon (PS) display low luminescence efficiency and luminous deterioration with age. PS is fabricated by electrochemical etching of p-type Si wafers (100) and passivated with a semi-transparent conducting ultrathin aluminum (Al) layer by auto thermal evaporation technique, with the goal of improving PS photoluminescence (PL) and employing it as a metal–semiconductor-metal (MSM: Au/Al: PS/Au) photodetector. Microstructure and optical characteristics of synthesized samples were analyzed by scanning electron microscopy, diffuse reflectance measurement using a UV–VIS-NIR spectrophotometer, and photoluminescence spectroscopy. Fourier transforms infrared and energy dispersion X-rays were used to analyze the structure. It has been determined that the Al layer increased the PL’s intensity by about 60% when compared to the PS. The presence of stable Si–Al bonds is responsible for the enhancements in characteristics. I–V characteristics of Au/Al: PS/Au device displayed a lower dark and higher photocurrent with a Schottky barrier and ideality factor equal to 0.88 and 2.37, respectively. The prepared photodetector displayed a higher sensitivity when exposed to a UV lamp (395 nm) at reverse bias. In consequence, the passivated Al layer enhances the PS's optical and electrical properties.

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References

  1. R.A. Ismail, A.M. Alwan, A.S. Ahmed, Appl. Nanosci. 7, 9 (2017)

    Article  CAS  Google Scholar 

  2. S. Khudiar, U. Nayef, F. Mutlak, J. Appl. Sci. Nanotechnol. 2, 64 (2022)

    Article  Google Scholar 

  3. M. Arias, M. Briceño, A. Marzo, and A. Zárate, J. Chil. Chem. Soc. 1, 1 (2019)

  4. A. M. Alwan, R. A. Abbas, and A. B. Dheyab, Silicon. 10, (2018)

  5. A.M. Alwan, D.A. Hashim, M.F. Jawad, J. Mater. Sci.: Mater. Electron. 30, 7301–7313 (2019)

    CAS  Google Scholar 

  6. C.H. Chen, Y.F. Chen, C.H. Chen, Y.F. Chen, Appl. Phys. Lett. 75, 2560 (1999)

    Article  CAS  Google Scholar 

  7. S. Sarmah, M. Das, D. Sarkar, Mater. Lett. 297, 129972 (2021)

    Article  CAS  Google Scholar 

  8. A. Harizi, F. Laatar, H. Ezzaouia, Results in Physics 12, 1716 (2019)

    Article  Google Scholar 

  9. M. Salem, I. Massoudi, M.A. Almessiere, A.L. Al-Otaibi, N.M. Alghamdi, M. Gaidi, M.A. El Khakani, K. Khirouni, J. Mater. Sci.: Mater. Electron. 28, 15768 (2017)

    CAS  Google Scholar 

  10. P.V. Seredin, A.S. Lenshin, D.L. Goloshchapov, A.N. Lukin, I.N. Arsentyev, A.D. Bondarev, I.S. Tarasov, Semiconductors 49, 915 (2015)

    Article  CAS  Google Scholar 

  11. M.E. Raypah, N.M. Ahmed, Mater. Sci. Semicond. Process. 31, 235 (2015)

    Article  CAS  Google Scholar 

  12. M.S. Almomani, N.M. Ahmed, M. Rashid, M.A. Almessiere, A.S. Altowyan, Mater. Chem. Phys. 258, 123935 (2021)

    Article  CAS  Google Scholar 

  13. M. Hosny, D. Wissem, H. Ikbel, Sensors & Transducers 27, 202 (2014)

    Google Scholar 

  14. H. Kim, C. Hong, C. Lee, Mater. Lett. 63, 434 (2009)

    Article  CAS  Google Scholar 

  15. M. Achref, A.J. Bessadok, L. Khezami, S. Mokraoui, M. Ben Rabha, Surf. Interf. 18, 100391 (2020)

    Article  CAS  Google Scholar 

  16. E. Kayahan, J. Lumin. 130, 1295 (2010)

    Article  CAS  Google Scholar 

  17. S. Ben Slama, M. Hajji, H. Ezzaouia, Nanoscale Res. Lett. 7, 1 (2012)

    Article  Google Scholar 

  18. K. Esmer, E. Kayahan, Appl. Surf. Sci. 256, 1548 (2009)

    Article  CAS  Google Scholar 

  19. Y. H. Ogata, in Handbook of Porous Silicon, ed. by L. Canham (2021), 1 edn

  20. U. M. Light, B. Gelloz, H. Fuwa, M. Behavior, P. Granitzer, K. Rumpf, M. Properties, P. Granitzer, and K. Rumpf, Nanomaterials. 5, 11 (2021)

  21. Yu. P. Piryantiki, L. A. Dolgov, O. V. Yaroshchuk, Condensed Matter Spectroscopy. 108, 1 (2010)

  22. K. Li, J. Jianguo, S. Tian, and F. Yan, J. Phys. Chem. C. 118, 5 (2014)

  23. W. J. Salcedo, F. J. R. Fernandez, and E. Galeazzo, Braz. J. Phys. 27, 158 (1997)

  24. M.A. Vásquez-A.a, G. Águila Rodrígueza, G. García-Salgadob, G. Romero-Paredesa, and R. Peña-Sierraa a Departamento, Revista Mexicana de Física. 53, 6 (2007)

  25. J. Sun, Y.W. Lu, X.W. Du, S.A. Kulinich, Appl. Phys. Lett. 86, 1 (2005)

    Google Scholar 

  26. J.M. Reyes, M.P. Ramos, C. Zu, W.C. Arriaga, P.R. Quintero, A. T. Jacome 160, 201 (2013)

    Google Scholar 

  27. H.H. Abass, B.A. Hasan, Iraqi Journal of Physics (IJP) 19, 41 (2021)

    Article  Google Scholar 

  28. B. E. B. Al-Jumaili, Z. A. Talib, A. Ramizy, N. M. Ahmed, L. Y. Josephine, S. B. Paiman, I. B. Muhd, and S. A. Abdulateef, J. Nanotechnol. 3, 1 (2016)

  29. B.E.B. Al-Jumaili, Z.A. Talib, J.L.Y.S.B. Paiman, N.M. Ahmed, J. Solid State Sci. Technol. Lett. 17, 79 (2016)

    Google Scholar 

  30. N. Naderi, M.R. Hashim, Int. J. Electrochem. Sci. 7, 11512 (2012)

    CAS  Google Scholar 

  31. J.M. Dhimmar, H.N. Desai, B.P. Modi, J. Nano- Electron. Phys. 8, 1 (2016)

    Article  Google Scholar 

  32. A.M. Selman, Z. Hassan, Sensors Actuat., A: Phys. 221, 15 (2015)

    Article  CAS  Google Scholar 

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Acknowledgements

The authors acknowledge Al-Mustansiriya University and Phi nano-Science center PNSC at Baghdad, Iraq for technical characterization.

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The authors declare that no funds were received during this work.

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Contributions

All authors contributed to this study, and read and approved the final manuscript. SAA: contributed to data handling, formal analysis, and writing-original draft. YMH: supervision, conceptualization, and validation. MAI: supervision, writing-review, and editing.

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Correspondence to Mohammed A. Ibrahem.

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Abdulgafar, S.A., Hassan, Y.M. & Ibrahem, M.A. Porous silicon passivated with aluminum for photoluminescence enhancement and photodetector applications. J Mater Sci: Mater Electron 34, 979 (2023). https://doi.org/10.1007/s10854-023-10436-4

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  • DOI: https://doi.org/10.1007/s10854-023-10436-4

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