Abstract
The majority of optoelectronic devices based on porous silicon (PS) display low luminescence efficiency and luminous deterioration with age. PS is fabricated by electrochemical etching of p-type Si wafers (100) and passivated with a semi-transparent conducting ultrathin aluminum (Al) layer by auto thermal evaporation technique, with the goal of improving PS photoluminescence (PL) and employing it as a metal–semiconductor-metal (MSM: Au/Al: PS/Au) photodetector. Microstructure and optical characteristics of synthesized samples were analyzed by scanning electron microscopy, diffuse reflectance measurement using a UV–VIS-NIR spectrophotometer, and photoluminescence spectroscopy. Fourier transforms infrared and energy dispersion X-rays were used to analyze the structure. It has been determined that the Al layer increased the PL’s intensity by about 60% when compared to the PS. The presence of stable Si–Al bonds is responsible for the enhancements in characteristics. I–V characteristics of Au/Al: PS/Au device displayed a lower dark and higher photocurrent with a Schottky barrier and ideality factor equal to 0.88 and 2.37, respectively. The prepared photodetector displayed a higher sensitivity when exposed to a UV lamp (395 nm) at reverse bias. In consequence, the passivated Al layer enhances the PS's optical and electrical properties.
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The authors acknowledge Al-Mustansiriya University and Phi nano-Science center PNSC at Baghdad, Iraq for technical characterization.
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All authors contributed to this study, and read and approved the final manuscript. SAA: contributed to data handling, formal analysis, and writing-original draft. YMH: supervision, conceptualization, and validation. MAI: supervision, writing-review, and editing.
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Abdulgafar, S.A., Hassan, Y.M. & Ibrahem, M.A. Porous silicon passivated with aluminum for photoluminescence enhancement and photodetector applications. J Mater Sci: Mater Electron 34, 979 (2023). https://doi.org/10.1007/s10854-023-10436-4
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DOI: https://doi.org/10.1007/s10854-023-10436-4