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Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films

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Abstract

The post-annealing process is an effective method to improve the properties of gallium oxide (Ga2O3) single crystal films. However, the studies on post-annealing of Ga2O3 films have been largely limited to the annealing temperature, with few reports of the annealing time. Here, we show the effect of annealing time on the Er-doped β-Ga2O3 (−201) epitaxial films deposited by pulsed laser deposition. The Ga2O3 film with a bandgap of ~ 4.98 eV and annealed at 900 °C for 15 min, exhibits the best crystal quality and optical property in comparison with the films before and after the annealing for 7 and 30 min in air. The epitaxial relationship between the film and substrate is Ga2O3 [010] ∥ GaN [−12−10] with Ga2O3 (−201) ∥ GaN (0001). Moreover, the resistivity of the 15 min-annealed Ga2O3 film, which is about 180 Ω·cm, still maintains a low level.

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Funding

This work is supported by the National Natural Science Foundation of China (61874067).

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Authors and Affiliations

  1. School of Physics and Electronics, Hunan University, Changsha, 410082, China

    Zi Wang, Zhuoxuan Zhang & Xiaokun Yang

  2. School of Microelectronics, Shandong University, Jinan, 250100, China

    Jie Liu & Hongdi Xiao

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  1. Zi Wang
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  2. Zhuoxuan Zhang
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Contributions

ZW: conceptualization, methodology, investigation, writing-original draft, data curation. ZZ: conceptualization, project administration, validation, writing - review & editing. XY: conceptualization, supervision, resources. JL: software, validation. HX: supervision, writing - review & editing, funding acquisition.

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Correspondence to Xiaokun Yang.

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Wang, Z., Zhang, Z., Yang, X. et al. Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films. J Mater Sci: Mater Electron 34, 897 (2023). https://doi.org/10.1007/s10854-023-10371-4

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