Skip to main content
SpringerLink
Log in

Process Optimization of Passive Matrix GaN-Based Micro-LED Arrays for Display Applications

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Passive matrix GaN-based micro light-emitting diode (LED) arrays with two resolutions of 32 × 32 and 128 × 64 are designed and fabricated, and a micro control unit is used to drive the devices and display Chinese characters. The process of the micro-LED display arrays is systematically optimized, where emphasis has been put on solving two specific technical problems. First, the deep isolation trench is etched in two steps in order to decrease the slope of the isolation trench so as to ease the p electrode to “climb”. In this way, the otherwise easily broken p metal line is now very reliable. Second, a secondary growth method is employed to deposit SiO2 onto the n metal line as an insulation layer between the p and n electrode layers. Between the two deposition steps, the chips are rotated with a certain angle. Therefore, the probability of pinhole overlap is significantly reduced, and the insulation between the p and n electrode layers is guaranteed. Using the optimized micro-LED process, micro displays are fabricated and their electrical, optical, and thermal characteristics for two different pixel sizes are analyzed. Experiments show that the process optimization above helps realize the outstanding properties of the micro-LED display arrays, increase the device and system reliability. The work will contribute to the implementation of the GaN based micro-LED technologies in real life.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Day, J. Li, D.Y.C. Lie, C. Bradford, J.Y. Lin, and H.X. Jiang, Appl. Phys. Lett. 99, 031116 (2011).

    Article  Google Scholar 

  2. K. Yeo, W. Ng, M. Soh, and T. H. Teo, 2017 IEEE 12th International Conference on ASIC (ASICON), 993, (2017).

  3. S.X. Jin, J. Li, J.Z. Li, J.Y. Lin, and H.X. Jiang, Appl. Phys. Lett. 76, 631 (2000).

    Article  Google Scholar 

  4. H.-Y. Lin, C.-W. Sher, D.-H. Hsieh, X.-Y. Chen, H.-M.P. Chen, T.-M. Chen, K.-M. Lau, C.-H. Chen, C.-C. Lin, and H.-C. Kuo, Photon. Res. 5, 411 (2017).

    Article  Google Scholar 

  5. Z.J. Liu, W.C. Chong, K.M. Wong, K.H. Tam, K.M. Lau, and I.E.E.E. Photon, Technol. Lett. 25, 2267 (2013).

    Article  Google Scholar 

  6. D. Peng, K. Zhang, V.S.-D. Chao, W. Mo, K.M. Lau, and Z. Liu, J. Disp. Technol. 12, 742 (2016).

    Article  Google Scholar 

  7. C.-M. Kang, D.-J. Kong, J.-P. Shim, S. Kim, S.-B. Choi, J.-Y. Lee, J.-H. Min, D.-J. Seo, S.-Y. Choi, and D.-S. Lee, Opt. Express 25, 2489 (2017).

    Article  Google Scholar 

  8. H.W. Choi, C.W. Jeon, and M.D. Dawson, IEEE Electron Dev. Lett. 25, 277 (2004).

    Article  Google Scholar 

  9. H.W. Choi, C.W. Jeon, and M.D. Dawson, J. Vac. Sci. Technol., B 23, 99 (2005).

    Article  Google Scholar 

  10. Z.Y. Fan, J.Y. Lin, and H.X. Jiang, J. Phys. D 41, 094001 (2008).

    Article  Google Scholar 

  11. C.-W. Jeon, K.-S. Kim, and M.D. Dawson, Phys. Stat. Sol. (a) 192, 325 (2002).

    Article  Google Scholar 

  12. R.-H. Horng, H.-Y. Chien, F.-G. Tarntair, and D.-S. Wuu, IEEE J. Electron Dev. Soc. 6, 1064 (2018).

    Article  Google Scholar 

  13. J.-C. Liou, Opt. Quant. Electron. 50, 400 (2018).

    Article  Google Scholar 

  14. S. Wu, S. Chhajed, L. Yan, W.H. Sun, M. Shatalov, V.A. Arahan, and M.A. Khan, Jpn. J. Appl. Phys. 45, 352 (2006).

    Article  Google Scholar 

  15. L.X. Zhao, S.C. Zhu, C.H. Wu, C. Yang, Z.G. Yu, H. Yang, and L. Liu, Sci. China-Phys. Mech. Astron. 59, 107301 (2016).

    Article  Google Scholar 

  16. C.-L. Tsai, and C.-T. Yen, IEEE Photon. J. 7, 1600109 (2015).

  17. J. Liu, Design and fabrication of GaN based high voltage LED, Master Dissertation (Technol: Beijing U, 2013).

    Google Scholar 

  18. Z. Gong, H.X. Zhang, E. Gu, C. Griffin, M.D. Dawson, V. Poher, G. Kennedy, P.M.W. French, M.A.A. Neil, and I.E.E.E. Trans, Electron Dev. 54, 2650 (2007).

    Article  Google Scholar 

  19. Y. Fu, J. Sun, Z. Du, W. Guo, C. Yan, F. Xiong, L. Wang, Y. Dong, C. Xu, J. Deng, T. Guo, and Q. Yan, Materials 12, 428 (2019).

    Article  Google Scholar 

Download references

Acknowledgments

We acknowledge the support from National Key R&D Program of China (2017YFB0403100 and 2017YFB0403102), National Natural Science Foundation of China (11674016), and the Swedish Foundation for International Cooperation in Research and Higher Education (CH2015-6202).

Author information

Authors and Affiliations

  1. Optoelectronics Technology Laboratory, Ministry of Education, Beijing University of Technology, Beijing, 100124, China

    Weiling Guo, Jianpeng Tai, Jianpeng Liu & Jie Sun

  2. Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, 41296, Sweden

    Jie Sun

Authors
  1. Weiling Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jianpeng Tai
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jianpeng Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Jie Sun
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jie Sun.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Guo, W., Tai, J., Liu, J. et al. Process Optimization of Passive Matrix GaN-Based Micro-LED Arrays for Display Applications. J. Electron. Mater. 48, 5195–5201 (2019). https://doi.org/10.1007/s11664-019-07330-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-019-07330-3

Keywords

Search

Navigation