Abstract
M phase Eu-doped VO2 powders were prepared by a hydrothermal method followed by post annealing. The semiconductor–metal transition (MIT) properties of the produced samples were studied by Raman spectroscopy, infrared transmittance and resistance measurements. The results indicated that a low dose of Eu doping in VO2 induces an enhanced switching ability of its infrared transmittance as the MIT occurs, and the ∆Tr is 48% at 1000 cm−1 when the dose of Eu doping is 6%. Moreover, a low dose of Eu doping in VO2 results a better crystal quality. While a high dose of Eu doping induces enhanced tensile stress in VO2, resulting in the formation of the M2 phase of VO2 at room temperature. These results suggested that Eu is a particularly effective dopant in the synthesis of high-quality M phase VO2. Thus, Eu doping in VO2 is a distinctive strategy for realizing M phase VO2 materials that have extensive applications in the construction of smart window coatings. Possible mechanisms of Eu doping in VO2 are discussed.
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Acknowledgements
We thank the National Natural Science Foundation of China (Grant No. 11474019) for financial support. We also thank Prof. Haibo Jin from Beijing Institute of Technology for supporting our variable temperature transmittance measurements and Prof. Jun Lu from IOP-CAS for support of our performance of variable temperature resistance.
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All authors contributed to this study. The idea of this work was suggested by XL. Material preparation, data collection, and analysis were performed by ZHX, GPP, KLJ, and XWC. The first draft of the manuscript was written by XL and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Li, X., Xu, Z., Pan, G. et al. Hydrothermal synthesis and thermochromism effects in Eu-doped VO2 polycrystalline materials. J Mater Sci: Mater Electron 34, 894 (2023). https://doi.org/10.1007/s10854-023-10303-2
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DOI: https://doi.org/10.1007/s10854-023-10303-2