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Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method

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Abstract

This paper studies the deposition of Hafnium Oxide (HfO2) thin films (TF) based on forming-free resistive random access memory (RRAM) devices using the method of electron beam evaporation. X-ray diffraction (XRD) analysis confirmed the amorphous nature of the deposited TF. The cross-sectional Field Emission Gun Scanning Electron Microscope (FEG-SEM) image of HfO2 TF shows a growth of ~ 134 nm thickness. Moreover, Energy-Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) determine the purity and chemical states of the sample, respectively. XPS also demonstrated the presence of oxygen vacancies in HfO2 TF responsible for enhanced resistive switching. HfO2 TF device exhibited forming-free resistive switching characteristics with stable retention of > 103 s and good endurance up to 1500 cycles at the reading voltage of + 1.4 V. The current–voltage (I–V) linear fitting reveals that in the charge transmission mechanism, Space Charge-Limited Current (SCLC) behaviour and Ohmic conduction dominate in the High Resistance State (HRS) and Low Resistance State (LRS), respectively. In addition, the device also recorded an excellent OFF/ON ratio (resistance window) in the order of ~ 102, which makes it a promising candidate for resistive switching non-volatile memory application.

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Acknowledgements

The authors acknowledge NIT Durgapur for FEG-SEM image, NIT Nagaland for financial support, Dr. Biraj Shougaijam, Assistant Professor, ECE Department, MTU Manipur for device deposition, and BARC Mumbai for XPS analysis.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Dimapur, Nagaland, 797103, India

    Borish Moirangthem, Pheiroijam Nonglen Meitei & Naorem Khelchand Singh

  2. Gas Sensing Devices Section, Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai, 400085, India

    Anil Krishna Debnath

Authors
  1. Borish Moirangthem
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  2. Pheiroijam Nonglen Meitei
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  3. Anil Krishna Debnath
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  4. Naorem Khelchand Singh
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Contributions

BM and PNM did the preliminary literature review. BM, PNM, and NKS did the deposition, XRD, SEM, and EDS characterization and analysis of the results. AKD did the XPS characterization. Finally, the manuscript was prepared by BM and NKS. All the authors read and approved the finalized manuscript.

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Correspondence to Naorem Khelchand Singh.

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Moirangthem, B., Meitei, P.N., Debnath, A.K. et al. Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method. J Mater Sci: Mater Electron 34, 306 (2023). https://doi.org/10.1007/s10854-022-09809-y

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