Abstract
The study focuses on the development of novel transparent electrode for maximizing energy harvesting and performance of an optoelectronic device. Along with the high visible transparency (of 82%), this electrode has also ensured high near-infrared transparency of 88% that is substantially higher than the conventionally used Sn-doped In2O3 (ITO), F-doped SnO2 (FTO) and Al-doped ZnO (AZO). The film shows an electrical resistivity of 24.54 × 10–3 Ω cm and a high electron concentration of 1.14 × 1021 cm−3. Moreover, this highly transparent visible/near-infrared Ta-doped TiO2 electrode is realized on a glass substrate that has inferior quality as compared to its crystalline counterparts and hence cost-effective. Here, magnetron sputtering, one of the commercially viable deposition techniques, is used to synthesize this electrode, thus enabling huge commercialization possibilities.
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Acknowledgements
We gratefully acknowledge financial support from Science and Engineering Research Board (SERB) and Department of Science and Technology (DST), Government of India (Project No. EMR/2016/001182 and SR/FST/ET-I/2017/18). We are also thankful to ACMS, IIT Kanpur, India, for XPS characterization.
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This work is financially supported by Science and Engineering Research Board (SERB) and Department of Science and Technology (DST), Government of India (Project No. EMR/2016/001182 and SR/FST/ET-I/2017/18).
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Shukla, S., Manwani, K., Patel, T.A. et al. Thin highly transparent visible/near-infrared Ta-doped TiO2 electrode. J Mater Sci: Mater Electron 34, 234 (2023). https://doi.org/10.1007/s10854-022-09672-x
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DOI: https://doi.org/10.1007/s10854-022-09672-x