Abstract
NiZnCo ferrite has a wide range of applications in high-frequency devices, but its performance can be further improved to meet more requirements. In this work, Sc3+-substituted Ni0.5Zn0.4Co0.1ScxFe2-xO4 (NZCScF, 0 ≤ x ≤ 0.1) ferrite soft magnetic materials were successfully prepared by sol–gel self-propagating approach. After using Sc3+ doping, the dielectric loss and dielectric constant are significantly reduced. The intensity of the coercive field decreases significantly with a rise in the Sc3+ content. It is noteworthy that after adding Sc3+ ions, the saturation magnetization can reach 94.27 emu/g, an increase of about 27%, and the initial permeability is increased by about 73%. In the high-frequency scope, the magnetic losses increase very little and up to 100 MHz the magnetic losses remain low. In conclusion, Sc3+ substitution effectively improves the electromagnetic properties of NiZnCo ferrite and greatly enhances the saturation magnetization and initial permeability. It can serve as a guide for the material application of a series of high-frequency devices such as radio-frequency microwave devices.
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Acknowledgements
This paper was supported by the Natural Science Foundation of Sichuan Province and Transfer Payment Project of Sichuan Province under Grant nos. 2022NSFSC0524 and R21ZYZF0001.
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Funding was provided by the Natural Science Foundation of Sichuan Province, (Grant No. 2022NSFSC0524), Transfer Payment Project of Sichuan Province under Grant nos, (Grant No. R21ZYZF0001).
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Material preparation, data collection, and analysis were performed by S-JH. And the manuscript was written by S-JH. Author L-ZL contributed to the study conception and design. The authors JT, RW, and ZX guide the experimental theoretical analysis. Author X-HW helped measure sample performance. Authors H-SG, XC, and Z-CZ contributed to the experimental implementation.
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Huang, SJ., Li, LZ., Tang, J. et al. Improvement of scandium ion substitution on the initial permeability and saturation magnetization of nickel-zinc-cobalt ferrite for high-frequency devices. J Mater Sci: Mater Electron 33, 26813–26824 (2022). https://doi.org/10.1007/s10854-022-09346-8
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DOI: https://doi.org/10.1007/s10854-022-09346-8