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Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode

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Abstract

In this work, which aims to investigate the capacitance and conductance properties of ZnCo2O4-doped Gelatin, 5% ZnCo2O4-doped Gelatin film was grown on n-type silicon wafer by sol–gel spin coating with the aim of fabricating Al/ZnCo2O4:Gelatin/n-Si Schottky diode. This investigation also explores the series resistance \((R_{S} )\) and interface state \((N_{ss} )\) characteristics of a diode produced with ZnCo2O4:Gelatin interface layer. Electrical measurements were taken in the voltage range of − 5 V and + 2 V and the frequency range of 30 kHz and 1 MHz. The electrical properties of the diodes were characterized from voltage and frequency-dependent measurements. Capacitance–voltage (C-V) and conductance–voltage (G-V) characteristics yielded higher values showing the significance of the interface states. At lower frequencies, the rise in the capacitance value is signed to the interface state density. The values of \(N_{SS}\) for 30 kHz and 1 MHz frequency are 10.5 × 1011 and 4.19 × 1011 eV−1 cm−2. It is recommended to use the produced diode as an electronic device.

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Acknowledgements

We are grateful to Selim ACAR for technical support during this work. We also thank to Scientific Research Projects foundation of Gazi University.

Funding

This work was financially supported by the Scientific Research Projects foundation of Gazi University (BAP 05/2020-20).

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    Sukru Cavdar, Yesim Demirolmez, Neslihan Turan & Haluk Koralay

  2. Department of Energy Systems Engineering, Faculty of Engineering, Giresun University, Giresun, Turkey

    Nihat Tuğluoğlu

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  1. Sukru Cavdar
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  2. Yesim Demirolmez
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  3. Neslihan Turan
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  4. Haluk Koralay
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  5. Nihat Tuğluoğlu
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Contributions

SC contributed to project administration, supervision, resources, investigation, writing original draft, visualization, writing review, and editing; YD contributed to investigation, experiment, formal analysis, visualization, NT contributed to investigation, formal analysis, visualization, and writing original draft; HK contributed to resources, investigation, writing original draft, visualization, writing review, and editing; NT contributed to investigation, writing original draft, visualization, writing review and editing. All the authors contributed to the discussion and manuscript preparation and approved the final manuscript.

Corresponding author

Correspondence to Sukru Cavdar.

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The authors declare that they have no known competing financial interest or personal relationships that could have influenced the work reported in this paper. All authors certify that they have no affiliations with or involvement in any organization or entity with any financial or non-financial interest in the subject matter or materials discussed in this paper. The authors declare that they have no financial or proprietary interests in any material discussed in this paper.

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Cavdar, S., Demirolmez, Y., Turan, N. et al. Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode. J Mater Sci: Mater Electron 33, 22932–22940 (2022). https://doi.org/10.1007/s10854-022-09063-2

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