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Effect of oxygen on the dielectric and energy storage performances of lead-free Bi2Mg2/3Nb4/3O7 thin films prepared by magnetron sputtering

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Abstract

Bi2Mg2/3Nb4/3O7 (BMN) thin films are prepared on Pt–Si substrates by magnetron sputtering, the influence of oxygen on dielectric and energy storage properties of BMN thin films is systematically studied. Under the optimal oxygen argon ratio, the BMN thin films show an acceptable dielectric constant of 161 and low loss of 0.0032. With the increase in oxygen argon ratio, the dielectric loss decreases and the breakdown strength increases. A large recoverable energy density of 61.7 J/cm3 with a high efficiency of 74.6% is obtained for the BMN thin films prepared at oxygen-argon ratio of 1/2. Especially, the BMN thin films exhibit an excellent thermal stability in an ultrawide temperature range from − 100 to 200 °C and strong fatigue endurance during the 1 × 106 charge–discharge cycles. These results suggest that the BMN thin films are a promising candidate for lead-free energy storage application in equipment operation under adverse environments.

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Funding

This work is supported by Science and Technology Project of Henan Province (Grant No. 222102230032), National Natural Science Foundation of China (Grant No. 52175525).

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Authors and Affiliations

  1. Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Henan Luoyang, 471023, China

    Lijuan Zhang, Lijun Song, Chao Wu & Shihui Yu

  2. School of Mechanical Engineering, Dalian University of Technology, Liaoning Dalia, 116024, China

    Xiaohu Wang

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Contributions

LZ contributed to conceptualization, methodology, software, investigation, writing original draft. LS, XW and CW contributed to investigation, formal analysis, visualization, writing—original draft. SY contributed to validation, formal analysis, visualization.

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Correspondence to Chao Wu or Shihui Yu.

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Zhang, L., Song, L., Wang, X. et al. Effect of oxygen on the dielectric and energy storage performances of lead-free Bi2Mg2/3Nb4/3O7 thin films prepared by magnetron sputtering. J Mater Sci: Mater Electron 33, 20929–20939 (2022). https://doi.org/10.1007/s10854-022-08899-y

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