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The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

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Abstract

This study was formed by the β-naphthol orange/p-Si metal–insulator–semiconductor (MIS) structure by obtaining β-naphthol orange on the p-Si surface using the sol–gel and spin-coating techniques. FTIR, EDX, and NMR analyzes of the synthesized dye-sensitized β-naphthol orange were performed. At room temperature, the current–voltage (I–V) measurements of the Al/β-naphthol orange/p-Si MIS structure showed that the device has a high rectification ratio of 3 × 105. Series resistance values were calculated as 385 and 38 Ω by Norde and Cheung methods, respectively. It was determined that the interface state density of the device was at the level of 1013 eV−1 cm−2 and increased exponentially from the middle of the bandgap to the upper edge of the valence band. Frequency-dependent capacitance–voltage (C–V) measurements at room temperature showed that the interface state densities in the device are effective in determining device parameters.

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Data availability

The datasets generated and analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

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The author did not receive support from any organization for the submitted work.

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Authors and Affiliations

  1. Opticianry Program, Health Services Vocational School, Batman University, Batman, Turkey

    Enise Özerden

  2. Department of Physics, Faculty of Sciences, Mugla Sitki Koçman University, 48000, Mugla Kotekli, Turkey

    Pınar Özden

  3. Faculty of Education, Erciyes University, Kayseri, Turkey

    İ. Afşin Kariper

  4. Department of Physics, Faculty of Sciences and Arts, Batman University, Batman, Turkey

    Osman Pakma

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  1. Enise Özerden
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  2. Pınar Özden
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  3. İ. Afşin Kariper
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  4. Osman Pakma
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Contributions

EÖ: Conceptualization, Methodology, Data Collectioan and Analysis, Writing-Reviewing and Editing PÖ: Data Collection and Analysis, Reviewing and Editing. İAK: Methodology. Data Collection and Analysis OP: Data Analysis, Writing-Reviewing and Editing.

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Correspondence to Enise Özerden.

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Özerden, E., Özden, P., Afşin Kariper, İ. et al. The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface. J Mater Sci: Mater Electron 33, 20900–20910 (2022). https://doi.org/10.1007/s10854-022-08897-0

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