Abstract
Thin films of the pre-melt quenched bulk samples of (SnSe4)95-x(Bi2Te3)5+x (x = 0, 5, 15) system have been prepared by thermal evaporation technique. The structural and optical properties of these thin films have been investigated utilizing normal transmittance spectra. Various parameters like linear refractive index (n) determined using Swanepoel method, dielectric constants (εr and εi), optical conductivity (σopt) determined using the linear refractive index, extinction coefficient (k), and absorption coefficient (α) have been evaluated. The optical bandgap (Egopt), direct and indirect (\({E}_{\text{g}}^{\text{dir}}\) and \({E}_{\text{g}}^{\text{ind}}\)), has been determined using the Tauc extrapolation method, and the bandgap values are found to decrease from 1.81 to 1.67 eV and 1.02 to 0.89 eV, respectively. Egopt values show a similar trend to the theoretically calculated bandgap. The observed change in the optical parameters has been explained based on the decreasing defect states in the system. The nonlinear properties of the aforementioned system have also been reported. The results revealed that with the addition of metallic elements Bi and Te there is an increase in the semiconducting behavior of the system.
Similar content being viewed by others
Data availability
All the relevant data are included in the article.
References
A.S. Mathur, S. Upadhyay, P.P. Singh, B. Sharma, P. Arora, V.K. Rajput, P. Kumar, D. Singh, B.P. Singh, Role of defect density in absorber layer of ternary chalcogenide Cu2SnS3 solar cell. Opt. Mater. 119, 111314 (2021). https://doi.org/10.1016/j.optmat.2021.111314
Y. Takagaki, B. Jenichen, M. Ramsteiner, A. Trampert, Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys. J. Alloy. Compd. 824, 153880 (2020). https://doi.org/10.1016/j.jallcom.2020.153880
P. Su, R. Pujari, V. Boodhoo, S. Aggarwal, P. Bhattacharya, O. Maksimov, K. Wada, S. Merlo, H.B. Bhandari, L.C. Kimerling, A. Agarwal, Ternary lead chalcogenide alloys for mid-infrared detectors. J. Electron. Mater. 49, 4577–4580 (2020). https://doi.org/10.1007/s11664-020-08114-w
S. Ding, S. Dai, Z. Cao, C. Liu, J. Wu, Composition dependence of the physical and acousto-optic properties of transparent Ge–As–S chalcogenide glasses. Opt. Mater. 108, 110175 (2020). https://doi.org/10.1016/j.optmat.2020.110175
P. Sharma, V. Sharma, E. Sharma, A. Dahshan, K.A. Aly, P. Kumar, A. Khan, A. Kumar, Rare-earth (Dy)-doped (GeS2)80(In2S3)20 thin film: Influence of annealing temperature in argon environment on the linear and nonlinear optical parameters. Appl. Phys. A 127, 68 (2021). https://doi.org/10.1007/s00339-020-04170-5
M. Xu, S.J. Akobs, R. Mazzarello, J.Y. Cho, Z. Yang, H. Hollermann, D. Shang, X. Miao, Z. Yu, L. Wang, M. Wuttig, Impact of pressure on the resonant bonding in the chalcogenides. J. Phys. Chem. 121, 25447–25454 (2017). https://doi.org/10.1021/acs.jpcc.7b07546
M. Behera, N.C. Mishra, S.A. Khan, R. Naik, Influence of 120 MeV Ag swift heavy ion irradiation on the optical and electronic properties of As–Se–Bi chalcogenide thin films. J. Non-Cryst. Solids 544, 120191 (2020). https://doi.org/10.1016/j.jnoncrysol.2020.120191
S.M. El-Sayed, G.A.M. Amin, Structure, optical absorption and electrical conductivity of amorphous AsSeGe thin films. Vacuum 62, 353–360 (2001). https://doi.org/10.1016/S0042-207X(01)00352-9
B.J. Eggleton, T.D. Vo, R. Pant, J. Schr, M.D. Pelusi, D. Yong Choi, S.J. Madden, B. Luther-Davies, Photonic chip based ultrafast optical processing based on high nonlinearity dispersion engineered chalcogenide waveguides. Laser Photonics Rev. 6, 97–114 (2012). https://doi.org/10.1002/lpor.201100024
H. Nasu, K. Kubodera, M. Kobayashi, M. Nakamura, K. Kamiya, Third-harmonic generation from some chalcogenide glasses. J. Am. Ceram. Soc. 73, 1794–1796 (1990). https://doi.org/10.1111/j.1151-2916.1990.tb09838.x
I. Aggarwal, J. Sanghera, Development and applications of chalcogenide glass optical fibers at NRL. J. Optoelectron. Adv. Mater. 4, 665–678 (2002)
Z. Wang, C.T.Y. Li, Q. Chen, The effects of Sn and Bi additions on properties and structure in Ge-Se-Te chalcogenide glass. J. Non-Cryst. Solids 191, 132–137 (1995). https://doi.org/10.1016/0022-3093(95)00249-9
R. Sharma, S.C. Katyal, S. Khanna, V. Sharma, P. Sharma, Study of amorphous Sn–Se–Bi–Te semiconducting materials at an average coordination number <r> = 2.4. Mater. Res. Express 6, 075209 (2019). https://doi.org/10.1088/2053-1591/ab1667
N. Afify, M.A. Hussein, N. El-Kabany, N. Fathy, Structural transformations on Se0.8Te0.2 chalcogenide glass. J. Non Cryst. Solids 354, 3260–3266 (2008). https://doi.org/10.1016/j.jnoncrysol.2008.02.011
R. Swanepoel, Determination of the thickness and optical constants of amorphous Ge–Se–Bi thin films. J. Phys. E. 16, 1214 (1983). https://doi.org/10.1088/0022-3735/16/12/023
E. Sharma, P. B. Barman, and P. Sharma, Evaluation of optical linear and non-linear parameters of thermally deposited GeTeSeGa thin films in NIR (1 μm–2.6 μm) wavelength range from their transmission spectra. Optik, 219, 165181 (2020).
H.E. Kondakci, M. Yaman, O. Koylu, A. Dana, M. Bayindir, All-chalcogenide glass omnidirectional photonic band gap variable infrared filters. Appl. Phys. Lett. 94, 111110 (2009). https://doi.org/10.1063/1.3103279
G.A.N. Connell, A.J. Lewis, Comments on the evidence for sharp and gradual optical absorption edges in amorphous germanium. Phys. Status Solidi (b) 60, 291 (1973). https://doi.org/10.1002/pssb.2220600132
A.S. Hassanien, R. Neffati, K.A. Aly, Impact of Cd-addition upon optical properties and dispersion parameters of thermally evaporated CdxZn1-xSe films: discussions on bandgap engineering, conduction and valence band positions. Optik 212, 164681 (2020). https://doi.org/10.1016/j.ijleo.2020.164681
J. Tauc, Optical properties of amorphous semiconductors, amorphous and liquid semiconductors (Plenum Press, New York, 1979)
F. Urbach, The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids. Phys. Rev. 92, 1324 (1953). https://doi.org/10.1103/PhysRev.92.1324
R.R. Reddy, Y. Nazeer Ahammed, K. Rama Gopal, D.V. Raghuram, Optical electronegativity and refractive index of materials. Opt. Mater. 10, 95–100 (1998). https://doi.org/10.1016/S0925-3467(97)00171-7
J.A. Duffy, Trends in energy gaps of binary compounds: an approach based upon electron transfer parameters from optical spectroscopy. J. Phys. C 13, 2979 (1980). https://doi.org/10.1088/0022-3719/13/16/008
K.A. Aly, Discussion on the interrelationship between structural, optical, electronic and elastic properties of materials. J. Alloys Compd. 630, 178–182 (2015). https://doi.org/10.1016/j.jallcom.2014.10.079
T.S. Moss, Relations between the refractive index and energy gap of semiconductors. Phys. Status Solidi B 131, 415–427 (1985). https://doi.org/10.1002/pssb.2221310202
N.M. Ravindra, S. Auluck, V.K. Srivastava, On the Penn gap in semiconductors. Phys. Status Solidi B 93, K155–K160 (1979). https://doi.org/10.1002/pssb.2220930257
D.R. Penn, Wave-number-dependent dielectric function of semiconductors. Phys. Rev. 128, 2093 (1962). https://doi.org/10.1103/PhysRev.128.2093
R.R. Reddy, Y. Nazeer Ahammed, A study on the Moss relation. Infrared Phys. Technol. 36, 825–830 (1995). https://doi.org/10.1016/1350-4495(95)00008-M
M. Kastner, Bonding bands, lone-pair bands, and impurity states in chalcogenide semiconductors. Phys. Rev. Lett. 28, 355 (1972). https://doi.org/10.1103/PhysRevLett.28.355
R. Sharma, E. Sharma, P.K. Singh, P. Sharma, Study of some network parameters for chalcogenide glasses at an average coordination number 2.4. AIP Conf. Proc. 2050, 020019 (2018). https://doi.org/10.1063/1.5083606
S.H. Wemple, Refractive-index behavior of amorphous semiconductors and glasses. Phys. Rev. B 7, 3767 (1973). https://doi.org/10.1103/PhysRevB.7.3767
S.H. Wemple, M. DiDomenico Jr., Behavior of the electronic dielectric constant in covalent and ionic materials. Phys. Rev. B 3, 1338 (1971). https://doi.org/10.1103/PhysRevB.3.1338
W.G. Spitzer, H.Y. Fan, Determination of optical constants and carrier effective mass of semiconductors. Phys. Rev. 106, 882 (1957). https://doi.org/10.1103/PhysRev.106.882
P. Halevi, F. Ramos-Mendieta, Tunable photonic crystals with semiconducting constituents. Phys. Rev. Lett. 85, 1875 (2000). https://doi.org/10.1103/PhysRevLett.85.1875
H. Ticha, L. Tichy, Semiempirical relation between nonlinear susceptibility (refractive index), linear refractive index and optical gap and its application to amorphous chalcogenides. J. Optoelectron. Adv. Mater. 4, 381–386 (2002)
F. Yakuphanoglu, A. Cukurovali, I. Yilmaz, Determination and analysis of the dispersive optical constants of some organic thin films. Physica B 351, 53–58 (2004). https://doi.org/10.1016/j.physb.2004.05.010
J.I. Pankove, Optical processes in semiconductors (Dover Publications Inc., NewYork, 1975)
K.A. Aly, Comment on the relationship between electrical and optical conductivity used in several recent papers published in the journal of materials science: materials in electronics. J. Mater. Sci. Mater. Electron. (2022). https://doi.org/10.1007/s10854-021-07496-9
G.L. Tan, L.K. DeNoyer, R.H. French, M.J. Guittet, M. Gautier-Soyer, Kramers-Kronig transform for the surface energy loss function. J. Electron. Spectros. Relat. Phenomena 142, 97–103 (2005). https://doi.org/10.1016/j.elspec.2004.09.002
A.S. Hassanien, I. Sharma, Band-gap engineering, conduction and valence band positions of thermally evaporated amorphous Ge15-xSbxSe50Te35 thin films: influences of Sb upon some optical characterizations and physical parameters. J. Alloys Compd. 798, 750–763 (2019). https://doi.org/10.1016/j.jallcom.2019.05.252
Acknowledgements
Author (RS) gratefully acknowledges the Jaypee University of Information Technology, Waknaghat, India for providing experimental facilities.
Funding
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. No financial assistance has been received for this work.
Author information
Authors and Affiliations
Contributions
RS: Experimental and methodology. SS: Methodology and writing—original draft. AD: Methodology and formal analysis. KAA: Methodology and formal analysis. PS: Conceptualization, writing—review & editing, and supervision.
Corresponding authors
Ethics declarations
Conflict of interest
The authors have no conflicts to disclose. If a conflict of interest is identified after publication, the authors will submit an Erratum.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Sharma, R., Sharda, S., Aly, K.A. et al. Nanocrystallization and optical properties of quaternary Sn–Se–Bi–Te chalcogenide thin films. J Mater Sci: Mater Electron 33, 16320–16333 (2022). https://doi.org/10.1007/s10854-022-08524-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-022-08524-y