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Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

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Abstract

Au/n-GaAs device was fabricated with an organic PNoMPhPPy thin polymer interfacial layer whose bandgap (Eg) was found as 2.95 eV from the (αhν)2–hν plot. The PNoMPhPPy poly(N-substituted pyrrole) was characterized by SEM. The evaluation of positive bias I–V–T results revealed an-abnormal decreases of ideality-factor (n) and increases of barrier-height (BH) with increasing of temperature. For instance, the values of BH \({[\varPhi }_{\mathrm{b}(IV)}]\) for the Au/PNoMPhPPy/n-GaAs were found as 0.84 eV (at 400 K), 0.82 eV (300 K) and 0.23 eV (at 60 K) from the ln(I)–V plots with a positive temperature coefficient (1.79 meV/K), whereas, \({\varPhi }_{\mathrm{b}(CV)}\) was found as 1.27 eV and 1.64 eV at 400 and 60 K from the C−2–V plots with a negative temperature coefficient (− 0.44 meV/K), thus exhibits similar behavior compared with the bandgap of GaAs (α = ΔEg/ΔT =  − 0.473 meV/K). These findings together with the inconsistency between \({\varPhi }_{\mathrm{b}(IV)}\) and \({\varPhi }_{\mathrm{b}\left(CV\right)}\) is the result of barrier-inhomogeneity and such temperature-dependence of \({\varPhi }_{\mathrm{b}(IV)}\) and n was explained on the basis of TE-theory with “Double-Gaussian-Distribution” (DGD) of BHs. Additionally, the observed some discrepancies in the electrical parameters extracted from the forward bias IV and reverse bias CV was attributed to the nature of measurement system and voltage dependent of them.

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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

The polymer used in this work was produced in the Turkish Scientific and Technical Research Council (TUBITAK) via Grant No. TBAG-105T382, where the corresponding author was a researcher.

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The authors did not receive support from any organization for the submitted work. The authors have no financial or proprietary interests in any material discussed in this article.

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Authors and Affiliations

  1. Physics Department, Faculty of Sciences, Gazi University, 06100, Ankara, Turkey

    Şemsettin Altındal

  2. Physics Department, Faculty of Art and Science, Süleyman Demirel University, 32260, Isparta, Turkey

    Ahmet Faruk Özdemir

  3. Physics Department, Faculty of Science, Atatürk University, 25100, Erzurum, Turkey

    Şakir Aydoğan

  4. Tütüncü Mehmet Efendi Street, Göztepe, Kadıköy, Istanbul, Turkey

    Abdülmecit Türüt

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  1. Şemsettin Altındal
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  2. Ahmet Faruk Özdemir
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  3. Şakir Aydoğan
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  4. Abdülmecit Türüt
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by ŞA, AFÖ, AT and ŞA. The first draft of the manuscript was written by Ş Altındal and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Ahmet Faruk Özdemir.

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Altındal, Ş., Özdemir, A.F., Aydoğan, Ş. et al. Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature. J Mater Sci: Mater Electron 33, 12210–12223 (2022). https://doi.org/10.1007/s10854-022-08181-1

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