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Improvement on microwave dielectric properties of Zn2GeO4 via gallium doping

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Abstract

A series of Ga3+-doped Zn2GeO4 willemite ceramics, in a general formula Zn2+0.5xGe1−xGaxO4 (0.1 ≤ x ≤ 0.4), were prepared and the influence of Ga3+ doping on the phase composition, structure, microstructure, and microwave dielectric properties were studied. XRD, SEM, and Raman analysis evidence that by moderate gallium substitution in the nominal Zn2GeO4, the unfavorable ZnO phase was suppressed, while a low-loss ZnGa2O4 phase was induced. With increasing doping content, the ZnGa2O4 phase increases in phase percentage and becomes dominant (~ 69%) after x = 0.3. Due to the mixture rule, both relative permittivity and quality factor were improved, which is related to the superior dielectric properties of ZnGa2O4 compared to Zn2GeO4. The microwave dielectric properties show a remarkable dependence on the composition. Sintered at 1230 °C, a combination of dielectric performances with εr ~ 9.4, Q × f ~ 97,000 GHz, and τf ~ − 30.7 ppm/°C was accessed in the x = 0.4 composition.

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All data generated or analyzed during this study are included in this published article.

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Acknowledgements

Z. Xing would like to appreciate the financial supports from the National Natural Science Foundation of Shaanxi (Grant No. 2019JQ-573) and the Special Fund for the high-level talents of Xijing University (No. XJ17T05).

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Authors and Affiliations

  1. School of Electronic Information Engineering, Xijing University, Xi’an, 710123, China

    Zhuo Xing, Juhai Weng & Chi Ma

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  1. Zhuo Xing
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  2. Juhai Weng
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  3. Chi Ma
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by Juhai Weng and Chi Ma. The first draft of the manuscript was written by Zhuo Xing and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Zhuo Xing.

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We would like to declare on behalf of my co-authors that the work described was original research that has not been published previously, and not under consideration for publication elsewhere, in whole or in part.

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Xing, Z., Weng, J. & Ma, C. Improvement on microwave dielectric properties of Zn2GeO4 via gallium doping. J Mater Sci: Mater Electron 33, 11625–11631 (2022). https://doi.org/10.1007/s10854-022-08063-6

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  • DOI: https://doi.org/10.1007/s10854-022-08063-6

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