Abstract
CuInS2 (CIS) thin films with petal-like nanostructures were synthesized in situ on copper substrates through a facile, one-step solvothermal method using InCl3 and thioacetamide ethylene glycol solution. In order to reveal the growth mechanism of CIS petal-like nanostructures, we synthesized CIS thin films with different morphologies at various reaction times. CIS thin films had a petal-like nanostructure. The petal possesses the preferentially exposed (222) facet, which becomes bigger and thicker as the increase of the reaction time. CIS petal-like nanostructures exhibited excellent light absorption properties. The average light absorption value of CIS synthesized at a reaction time of 4 h reached to 96.5%, and the minimum light absorption value even reached to 92% for that synthesized at a reaction time of 10 h. The CIS petal-like nanostructures synthesized at a reaction time of 4 h exhibit a band gap of 1.58 eV, which is much larger than that of the corresponding bulk material (1.04 eV). Furthermore, the band gap of CIS petal-like nanostructure decreases with increasing reaction time due to the increased “petal” thickness. All these results showed that the light absorption properties and band gap of CIS petal-like nanostructures can be adjusted by controlling the reaction time, which also indicated the application advantages of CIS petal-like nanostructures in photovoltaic and photocatalysis.
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Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 11704237, 11875183, 61804156, U1404115 and 11647019), Key teacher program of Henan Province (Grant No. 2018GGJS135), Henan Provincial Natural Science Foundation of China (Grant No. 212102210221), Program for Innovative Research Team (in Science and Technology) in University of Henan Province (Grant No. 16IRTSTHN028), and Shanghai Sailing Program (Grant No. 18YF1427800).
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Li, L., Chen, Y., Lv, Z. et al. In situ one-step synthesis of CuInS2 thin films with different morphologies and their optical properties. J Mater Sci: Mater Electron 33, 2995–3001 (2022). https://doi.org/10.1007/s10854-021-07499-6
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DOI: https://doi.org/10.1007/s10854-021-07499-6