Abstract
The current research work focuses on the realization of n-ZnO/MoO3/PEDOT:PSS-based hybrid device. The fabricated device exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The optimum n-ZnO and intermediate MoO3layers were deposited using the spray pyrolysis technique at 698 K and 670 K, respectively. Using a spin-coating technique, the PEDOT:PSS layer was deposited at 2000 rpm. The structural analysis and the cross-sectional FESEM analysis of the fabricated device validate the presence of a multi-layered thin-film structure. The current-voltage (I-V), UV photoresponse, and RS behavior of the fabricated n-ZnO/MoO3/PEDOT:PSS-based hybrid device was investigated. The hybrid device shows a higher photoresponsivity (R) value of 0.42 A/W with a fast rise and fall time value measured as 310 ms and 970 ms, respectively. The RS analysis of the fabricated hybrid device shows a stable endurance characteristic for more than 100 cycles. Formation/rupture of conductive filaments using anions (O2−) and cations (Ag+) across the interface of the fabricated hybrid device was proposed as a possible RS mechanism.
Similar content being viewed by others
Data availability
The data that support the findings of this study are available within the article.
References
N. Gogurla, A.K. Sinha, S. Santra, S. Manna, S.K. Ray, Multifunctional Au-ZnO plasmonic nanostructures for enhanced UV photodetector and room temperature NO sensing devices. Sci. Report. 4(1), 1–9 (2014)
Y.K. Mishra, G. Modi, V. Cretu, V. Postica, O. Lupan, T. Reimer, I. Paulowicz, V. Hrkac, W. Benecke, L. Kienle, R. Adelung, Direct growth of freestanding ZnO tetrapod networks for multifunctional applications in photocatalysis, UV photodetection, and gas sensing. ACS Appl. Mater. Interfaces 7(26), 14303–14316 (2015)
S.K. Shaikh, V.V. Ganbavle, S.I. Inamdar, K.Y. Rajpure, Multifunctional zinc oxide thin films for high-performance UV photodetectors and nitrogen dioxide gas sensors. RSC Adv. 6(31), 25641–25650 (2016)
M.S. Pawar, P.K. Bankar, M.A. More, D.J. Late, Ultra-thin V2O5 nanosheet based humidity sensor, photodetector and its enhanced field emission properties. RSC Adv. 5(108), 88796–88804 (2015)
A. Sarkar, G.G. Khan, A. Chaudhuri, A. Das, K. Mandal, Multifunctional BiFeO3/TiO2 nano-heterostructure: Photo-ferroelectricity, rectifying transport, and non-volatile resistive switching property. Appl. Phys. Lett. 108(3), 033112 (2016)
S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, H. Shen, ZnO Schottky ultraviolet photodetectors. J. Cryst. Growth 225(2-4), 110–113 (2001)
S.S. Shinde, K.Y. Rajpure, High-performance UV detector based on Ga-doped zinc oxide thin films. Appl. Surf. Sci. 257, 9595–9599 (2011)
X. Fang, T. Zhai, U.K. Gautam, L. Li, L. Wu, Y. Bando, D. Golberg, ZnS nanostructures: from synthesis to applications. Prog. Mater Sci. 56(2), 175–287 (2011)
B.K. Sharma, N. Khare, S. Ahmad, A ZnO/PEDOT: PSS based inorganic/organic hetrojunction. Solid State Commun. 149(19-20), 771–774 (2009)
E.M. Vogel, Technology and metrology of new electronic materials and devices. Nat. Nanotechnol. 2, 25–32 (2007)
Q. Xia, J.J. Yang, Memristive crossbar arrays for brain-inspired computing. Nat. Mater. 18, 309–323 (2019)
H. Liu, D. Bedau, D. Backes, J.A. Katine, J. Langer, A.D. Kent, Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices. Appl. Phys. Lett. 97(24), 242510 (2010)
N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N.Y. Park, G.B. Stephenson, I. Stolitchnov, A.K. Taganstev, D.V. Taylor, T. Yamada, S. Streiffer, Ferroelectric thin films: Review of materials, properties and applications. Journal of applied physics 100 (5), (2006) 051606
F. Pan, S. Gao, C. Chen, C. Song, F. Zeng, Recent progress in resistive random access memories: materials, switching mechanisms, and performance. Mater. Sci. Eng. R: Reports 83, 1–59 (2014)
W.Y. Chang, K.J. Cheng, J.M. Tsai, H.J. Chen, F. Chen, M.J. Tsai, T.B. Wu, Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals. Appl. Phys. Lett. 95(4), 042104 (2009)
R. Waser, M. Aono, Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007)
R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(25–26), 2632–2663 (2009)
Y. Abbas, I.S. Han, A.S. Sokolov, Y.R. Jeon, C. Choi, Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics. Mater Sci: Mater Electron 31(2), 903–909 (2020)
A. Sawa, Resistive switching in transition metal oxides. Mater. Today. 11(6), 28–36 (2008)
C. Yoshida, K. Tsunoda, H. Noshiro, Y. Sugiyama, High speed resistive switching in Pt/TiO2/TiN film for non-volatile memory application. Appl. Phys. Lett. 91(22), 223510 (2007)
W.J. Ma, S.P. Lin, J.M. Luo, X.Y. Zhang, Y. Wang, Z.X. Li, B. Wang, Y. Zheng, Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer. Appl. Phys. Lett. 103(26), 262903 (2013)
Y.H. Do, J.S. Kwak, Y.C. Bae, K. Jung, H. Im, J.P. Hong, Hysteretic bipolar resistive switching characteristics in TiO2/TiO2–x multilayer homojunctions. Appl. Phys. Lett. 95(9), 093507 (2009)
M.J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.B. Kim, C.J. Kim, D.H. Seo, S. Seo, U.I. Chung, I.K. Yoo, K. Kim, A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5– x/TaO2– x bilayer structures. Nat. Mater. 10(8), 625–630 (2011)
J.P. Colinge, C.A. Colinge, Physics of semiconductor devices (Springer, New York, 2005)
A. Rasool, R. Amiruddin, I.R. Mohamed, M.C. Santhosh Kumar, Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer. Superlattices Microstruct. 147, 106682 (2020)
A. Rasool, R. Amiruddin, S. Kossar, M.C. Santhosh Kumar, Realization of In: ZnO/PEDOT: PSS based multifunctional device for ultraviolet (UV) light detection and resistive switching memory applications. J. Appl. Phys. 128, 044503 (2020)
A. Rasool, M.C. Santhosh Kumar, M.H. Mamat, C. Gopalakrishnan, R. Amiruddin, Analysis on different detection mechanisms involved in ZnO-based photodetector and photodiodes. J. Mater. Sci.: Mater. Electron. 31(9), 7100–7113 (2020)
V. Svrcek, M. Kolenda, A. Kadys, I. Reklaitis, D. Dobrovolskas, T. Malinauskas, M. Lozach, D. Mariotti, M. Strassburg, R. Tomašiunas, Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage. Nanomaterials 8(12), 1039 (2018)
L. Li, F. Zhang, J. Wang, Q. An, Q. Sun, W. Wang, J. Zhang, F. Teng, Achieving EQE of 16,700% in P3HT:PC71BM based photodetectors by trap-assisted photomultiplication. Sci. Report 5(1), 1–7 (2015)
R. Amiruddin, M.C. Santhosh Kumar, High-speed photoresponse properties of ultraviolet (UV) photodiodes using vertically aligned Al:ZnO nanowires. Physica Status Solidi (a) 214(9), 1600658 (2017)
L. Chua, Memristor-the missing circuit element. IEEE Trans. Circ. Theor. 18, 507–519 (1971)
M.A. Lampert, Simplified theory of space-charge-limited currents in an insulator with traps. Phys. Rev. 103(6), 1648 (1956)
A. Rose, Space-charge-limited currents in solids. Phys. Rev. 97, 1538 (1955)
Y. Seo, S. Lee, I. An, C. Song, H. Jeong, Conduction mechanism of leakage current due to the traps in ZrO2 thin film. Semicond. Sci. Technol. 24, 115016 (2009)
B.P. Yalagala, P. Sahatiya, C.S.R. Kolli, S. Khandelwal, V. Mattela, S. Badhulika, V2O5 nanosheets for flexible memristors and broadband photodetectors. ACS Appl. Nano Mater. 2, 937–947 (2019)
M. Bharathi, B. Balraj, C. Sivakumar, Z. Wang, J. Shuai, M.S. Ho, D. Guo, Effect of Ag doping on bipolar switching operation in molybdenum trioxide (MoO3) nanostructures for non-volatile memory. J. Alloy. Compd. 862, 158035 (2021)
Acknowledgements
The authors wish to acknowledge Dr. M. Vajjiravel, Assistant Professor, B. S. Abdur Rahman Crescent Institute of Science and Technology (BSACIST), Chennai, for extending his support toward the deposition of PEDOT:PSS layers by the spin coating process. RA wishes to acknowledge the award of Crescent seed money [Lr. No. 1239/Dean (R)/2019] and AR wishes to acknowledge a BSA-Junior Research Fellowship [Lr. No. 682/Dean (R)/2019] provided by B. S. Abdur Rahman Crescent Institute of Science and Technology (BSACIST), Chennai.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The authors declare no conflict of interest.
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Rasool, A., Amiruddin, R., Kossar, S. et al. Multifunctional n-ZnO/MoO3/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications. J Mater Sci: Mater Electron 33, 2090–2100 (2022). https://doi.org/10.1007/s10854-021-07414-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-021-07414-z