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Multifunctional n-ZnO/MoO3/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications

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Abstract

The current research work focuses on the realization of n-ZnO/MoO3/PEDOT:PSS-based hybrid device. The fabricated device exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The optimum n-ZnO and intermediate MoO3layers were deposited using the spray pyrolysis technique at 698 K and 670 K, respectively. Using a spin-coating technique, the PEDOT:PSS layer was deposited at 2000 rpm. The structural analysis and the cross-sectional FESEM analysis of the fabricated device validate the presence of a multi-layered thin-film structure. The current-voltage (I-V), UV photoresponse, and RS behavior of the fabricated n-ZnO/MoO3/PEDOT:PSS-based hybrid device was investigated. The hybrid device shows a higher photoresponsivity (R) value of 0.42 A/W with a fast rise and fall time value measured as 310 ms and 970 ms, respectively. The RS analysis of the fabricated hybrid device shows a stable endurance characteristic for more than 100 cycles. Formation/rupture of conductive filaments using anions (O2−) and cations (Ag+) across the interface of the fabricated hybrid device was proposed as a possible RS mechanism.

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Acknowledgements

The authors wish to acknowledge Dr. M. Vajjiravel, Assistant Professor, B. S. Abdur Rahman Crescent Institute of Science and Technology (BSACIST), Chennai, for extending his support toward the deposition of PEDOT:PSS layers by the spin coating process. RA wishes to acknowledge the award of Crescent seed money [Lr. No. 1239/Dean (R)/2019] and AR wishes to acknowledge a BSA-Junior Research Fellowship [Lr. No. 682/Dean (R)/2019] provided by B. S. Abdur Rahman Crescent Institute of Science and Technology (BSACIST), Chennai.

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Rasool, A., Amiruddin, R., Kossar, S. et al. Multifunctional n-ZnO/MoO3/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications. J Mater Sci: Mater Electron 33, 2090–2100 (2022). https://doi.org/10.1007/s10854-021-07414-z

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