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Investigation on the effect of metal contacts on the vertical MnO2 nanowire array-based Schottky barrier diodes

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Abstract

This work reflects the successful fabrication of manganese dioxide (MnO2) nanowires (NW) by glancing angle deposition technique. The impact of metals like gold (Au) and silver (Ag) on the electrical characteristics of the metal–semiconductor junction were scrutinised. Evaluation of the junction parameters like ideality factor, series resistance, Schottky barrier height and interface index parameters were done. Capacitance voltage measurements exhibit a typical metal oxide semiconductor behaviour which includes the accumulation, depletion and the inversion regime. Upon collating with the junction parameters of Au and Ag, it was found that Au proves to be a better candidate than Ag, and is applicable especially in optoelectronics application.

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Abbreviations

NW:

Nanowires

GLAD:

Glancing angle deposition

Au:

Gold

Ag:

Silver

MS:

Metal–semiconductor

SBD:

Schottky barrier diodes

FESEM:

Field emission scanning electron microscope

TF:

Thin film

Cu:

Copper

Pt:

Platinum

I−V :

Current–voltage

C−V :

Capacitance–voltage

SBH:

Schottky barrier height

IF:

Ideality factor

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Acknowledgements

The authors would like to acknowledge the NCPRE for the FESEM analysis. They are also grateful to the NIT Nagaland for providing the facilities.

Funding

This work is ostensibly supported and funded by SERB, DST, Government of India (EEQ/2017/000138).

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, NIT Nagaland, Dimapur, Nagaland, 797103, India

    Stacy A. Lynrah & P. Chinnamuthu

Authors
  1. Stacy A. Lynrah
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  2. P. Chinnamuthu
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Contributions

Both the authors have contributed, discussed the results and approved the final manuscript. SAL has carried out the experiment and investigates the data with the support of PC who conceived the original idea and supervised the work.

Corresponding author

Correspondence to P. Chinnamuthu.

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Lynrah, S.A., Chinnamuthu, P. Investigation on the effect of metal contacts on the vertical MnO2 nanowire array-based Schottky barrier diodes. J Mater Sci: Mater Electron 33, 23910–23917 (2022). https://doi.org/10.1007/s10854-021-07373-5

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  • DOI: https://doi.org/10.1007/s10854-021-07373-5

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