Abstract
A transparent photovoltaic device of NiO/MgO QDs/TiO2 array pn junction was fabricated via a continuous hydrothermal-hydrolysis-sputtering method. Therefore, the TiO2 arrays were prepared via a hydrothermal method, and the MgO QDs prepared by hydrolysis method were introduced on the surface of TiO2 arrays. Subsequently, the NiO film was deposited on the surface of MgO QDs/TiO2 arrays by sputtering. As revealed, the as-prepared transparent photovoltaic device exhibits a high transmittance of about ~ 80% in visible light, an obvious photovoltaic enhancement of about ~ 3 × 102 folds (PCE of 1.18%) than unmodified device, and decent stability during 3000 s’ cycle, which can be mainly ascribed to that the MgO QDs with high quantum yield and appropriate potential can increase the charge carrier injection and assuage the potential gradient to improve the charge carriers efficiency, while maintaining the transparency. Additionally, the small size of MgO QDs can improve pn junction interface and the orderly arrays can increase solar efficiency.
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This work was supported by the Natural Science Foundation of China (Nos. 51802282 and 51672249).
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Fu, W., Pan, J., Niu, J. et al. A transparent photovoltaic device of NiO/MgO quantum dots/TiO2 arrays pn junction with carrier injection of MgO QDs. J Mater Sci: Mater Electron 33, 652–662 (2022). https://doi.org/10.1007/s10854-021-07333-z
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DOI: https://doi.org/10.1007/s10854-021-07333-z