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Enhanced optoelectronics performances of multilayer Sb0.1Mo0.9Se2/SnSe2 heterostructure

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Abstract

In the present investigation, Sb0.1Mo0.9Se2 single crystals belonging to semiconductor-layered transition metal di-chalcogenides (SLTMDCs) are grown by direct vapor transport (DVT) technique in a dual-zone furnace. The surface topographic properties of exfoliated crystals are studied under an optical microscope and scanning electron microscopy (SEM). The SEM analysis reveals the presence of hexagonal particles. The direct optical energy band gap of exfoliated crystal, 1.44 eV, is obtained by UV–visible spectroscopy. The photoluminescence (PL) and Raman spectroscopy are employed to elucidate the excitonic mechanism and vibrational properties. The semiconducting behavior of exfoliated crystals is examined by high-temperature resistivity. Heterostructure devices of thin-film SnSe2/Sb0.1Mo0.9Se2 crystal are prepared to study its rectifying nature. The diode parameter such as ideality factor, saturation current, and barrier potential is evaluated by Ln I–V technique. The photoconduction property of the fabricated device along the ab-plane is recorded under a polychromatic source of intensity 30 mW cm−2. The photo-detecting properties such as responsivity (149 mA W−1) and detectivity (108 Jones) are determined to evince the excellent photodetection property of detector at 800 mV and 1200 mV bias voltages, respectively.

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Acknowledgements

The author VRD is thankful to Bharatiya Vidya Bhavan, Smt. M. K. Patel School Narsanda Nadiad, Gujarat, for providing permission to carry out research work. The author VRD is also thankful to Material Science Semiconducting Processing Journal (Elsevier) for providing permission to reuse the Figure 1(a-b) from the already published work wide License number 5167730565294, date Oct, 14, 2021.

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Authors and Affiliations

  1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, Gujarat, 388120, India

    Vijay Dixit, Salil Nair, Jolly Joy, C. U. Vyas, G. K. Solanki & V. M. Pathak

  2. Shri A.N. Patel P.G. Institute of Science & Research, Anand, Gujarat, 388001, India

    C. U. Vyas

  3. Department of Physics, The Maharaja Sayajirao University of Baroda, Vadodara, Gujarat, 390002, India

    Som Narayan & P. K. Jha

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  1. Vijay Dixit
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  8. V. M. Pathak
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Contributions

The author VRD has grown Sb0.1Mo0.9Se2 single crystal by direct vapor transport technique. VRD has also carried out all the measurements and analysis work. VRD, SN, CUV, and JJ have equally contributed their expertise in the preparation of heterostructure using the thermal evaporation technique. Raman spectroscopic measurements were performed the by authors SN and PKJ. The entire work was supervised by the authors GKS and VMP. All authors have contributed equally in manuscript preparation and their final approval.

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Correspondence to Vijay Dixit.

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Dixit, V., Nair, S., Joy, J. et al. Enhanced optoelectronics performances of multilayer Sb0.1Mo0.9Se2/SnSe2 heterostructure. J Mater Sci: Mater Electron 32, 28739–28749 (2021). https://doi.org/10.1007/s10854-021-07256-9

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