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The influential mechanism of Ti doping on thermoelectric properties of Bi0.5Sb1.5Te3 alloy

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Abstract

The Ti-doped bismuth telluride-based thermoelectric material was prepared by high-temperature smelting combined with powder metallurgy, and the electron and phonon transporting mechanism was studied by a combination of first-principle calculations and experimental tests. The results show that Ti doping will introduce impurity levels, and its 3d orbits could significantly increase the density of states near the Fermi level, thereby increasing the effective mass, carrier concentration, and electrical conductivity and reducing the Seebeck coefficient. Ti doping will introduce a larger stress field, increase phonon scattering, and reduce lattice thermal conductivity. The maximum ZT value of the sample reached 1.25 at 340 K, which is 21.36% higher than that of the undoped sample.

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Acknowledgements

The work is supported by the School youth fund of Wuhan Donghu University. Thank my tutors Professor Fan Xi'an and Professor Li Guangqiang for their guidance. Thank my wife Wang Wei for her support.

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  1. School of Mechanical and Electrical Engineering, Wuhan Donghu University, Wuhan, 430070, China

    Bo Feng, Yong Tang & Juan Lei

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  1. Bo Feng
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  2. Yong Tang
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  3. Juan Lei
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Correspondence to Bo Feng.

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Feng, B., Tang, Y. & Lei, J. The influential mechanism of Ti doping on thermoelectric properties of Bi0.5Sb1.5Te3 alloy. J Mater Sci: Mater Electron 32, 28534–28541 (2021). https://doi.org/10.1007/s10854-021-07232-3

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  • DOI: https://doi.org/10.1007/s10854-021-07232-3

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