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Tuning p-type semiconduction with ultra-low thermal conductivity in nanocrystalline n-type BiSbTe1. 5Se1.5 high entropy alloy via Ag doping

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Abstract

The current investigation reports the tuning of p-type semiconduction in nanocrystalline BiSbTe1. 5Se1.5 high entropy alloy (HEA) by Ag doping (0.3–0.9 at%) processed through mechanical alloying (MA) and spark plasma sintering (SPS). The entropy engineering and nanostructuring phenomena synergistically lower the thermal conductivity (K) below 1 W/mk in all samples. The superior ZT value of 0.45 is achieved in p-type BiSbTe1.5Se doped with 0.6 at% Ag doping, comparable with its n-type BiSbTe1.5Se1.5 possessing ZT of 0.43 at 523 K. The consistency in material chemistry and identical temperature dependence of ZT in both p-type and n-type materials of the current investigation provide promising perspectives for developing low-loss thermoelectric generators.

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Data availability

The data that support the findings of this study are available on request from the corresponding author, Kumaran S.

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Author notes

  1. P. Vivekanandhan

    Present address: Centre for Automotive Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials, Chennai, Tamil Nadu, 600 113, India

Authors and Affiliations

  1. Green Energy Materials and Manufacturing Research Group, Department of Metallurgical and Materials Engineering, National Institute of Technology, Tiruchirappalli, Tamil Nadu, 620 015, India

    Arun Raphel, P. Vivekanandhan & S. Kumaran

  2. Department of Mechanical Engineering, Viswajyothi College of Engineering and Technology, Ernakulam, Kerala, 686670, India

    Arun Raphel

Authors
  1. Arun Raphel
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  2. P. Vivekanandhan
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  3. S. Kumaran
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Contributions

Arun Raphel: Methodology, Investigation, Validation & Writing - Original Draft. Vivekanandhan P: Investigation, Validation, Supervision, Writing - Review & Editing. Kumaran S: Conceptualization, Methodology, Supervision, Validation, Resources, Project administration, Review & Editing.

Corresponding author

Correspondence to S. Kumaran.

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The authors declare that we have no known competing financial interests or personal relationships that could have appeared to influence the work entitled “Tuning p-type semiconduction with ultra-low thermal conductivity in nanocrystalline n-type BiSbTe1. 5Se1.5 high entropy via Ag doping” that is submitted for Applied Physics A Materials Science & Processing. Therefore, “No potential conflict of interest” is reported by the authors.

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Raphel, A., Vivekanandhan, P. & Kumaran, S. Tuning p-type semiconduction with ultra-low thermal conductivity in nanocrystalline n-type BiSbTe1. 5Se1.5 high entropy alloy via Ag doping. Appl. Phys. A 130, 389 (2024). https://doi.org/10.1007/s00339-024-07553-0

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