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Effect of Tantalum ion doping on the structure and electrical properties of Bi3Ti1.5W0.5O9-Bi4Ti3O12 intergrowth bismuth-layered ceramics

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Abstract

Bi7Ti4.5-xTaxW0.5O21 (BTW-BIT-xTa, x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.30) intergrowth bismuth-layered ceramics were fabricated by traditional solid-phase method. The effects of Ta5+ ion doping on the structure and morphology of BTW-BIT ceramics were investigated by measuring XRD and SEM Photos. It indicated that octahedral distortion was increased with the introduction of Ta5+ ion, giving rise to enhancing Curie temperature and ranging from 689 °C to 721 °C. By means of analysis of the dielectric, impedance and ferroelectric, it was concluded that oxygen vacancies of samples were reduced due to donor ion Ta5+ substituted for ion Ti4+ at B-site. The decreased oxygen vacancies lessened the dielectric loss, improved the insulating properties of the samples, and made the electrical performances better. BTW-BIT-0.10Ta had the optimal electrical performances with a high d33 of 15.3 pC/N (more than twice that of BTW-BIT ceramic), a high Curie temperature Tc of 705 °C and a good thermal stability, indicating a potential application in the high-temperature field.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (52062018, 51862016, 51762024), Natural Science Foundation of Jiangxi Province (20192BAB20600, 20192BAB212002), the Foundation of Jiangxi Provincial Education Department (GJJ190712, GJJ190699, GJJ201331), Key Laboratory of Inorganic Functional Materials and Devices of Chinese Academy of Sciences (KLIFMD202004) and Jingdezhen Science and Technology Bureau (2019GYZD008-23).

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  1. Jiangxi Key Laboratory of Advanced Ceramic Materials, Department of Material Science and Engineering, Jingdezhen Ceramic University, Jingdezhen, 333001, Jiangxi, China

    Renfen Zeng, Xiangping Jiang, Chao Chen, Xiaokun Huang, Xin Nie, Fen Ye, Junsheng Zhuang & Junming Liu

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Zeng, R., Jiang, X., Chen, C. et al. Effect of Tantalum ion doping on the structure and electrical properties of Bi3Ti1.5W0.5O9-Bi4Ti3O12 intergrowth bismuth-layered ceramics. J Mater Sci: Mater Electron 32, 23911–23922 (2021). https://doi.org/10.1007/s10854-021-06849-8

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