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Impact of composite last quantum barrier on the performance of AlGaN-based deep ultraviolet light-emitting diode

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Abstract

The AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with a newly developed composite last quantum barrier (CLQB) were studied extensively. The CLQB was composed of a conventional undoped last quantum barrier (u-LQB) and an extra Mg-doped last quantum barrier (p-LQB). It was demonstrated that the light output power of the DUV-LED could be improved significantly by inserting the p-LQB to form the CLQB with carefully optimized Mg-doping level. In fact, the light output power of the AlGaN-based DUV-LED with the optimized CLQB increased by approximately 30% as compared with the DUV-LEDs fabricated without the insertion of the p-LQB at an injection current of 40 mA. Furthermore, it was revealed that the increase in light output power could be ascribed to the introduction of the CLQB, which attenuated the electrical current leakage and increased the hole injection efficiency.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 62005026), Natural Science Foundation of Jiangsu Province (Grant No. BK20191027), National Natural Science Foundation of China (Grant No. 61804027), and Natural Science Foundation of Jiangsu Province (Grant No. BK20180359).

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Authors and Affiliations

  1. Advanced Photonics Center, Southeast University, Nanjing, 210096, Jiangsu, China

    Liang Lu, Xiong Zhang, Aijie Fan, Shuai Chen, Cheng Li, Abbas Nasir, Zhe Zhuang, Guohua Hu & Yiping Cui

  2. College of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, Jiangsu, China

    Shuchang Wang

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  1. Liang Lu
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Lu, L., Zhang, X., Wang, S. et al. Impact of composite last quantum barrier on the performance of AlGaN-based deep ultraviolet light-emitting diode. J Mater Sci: Mater Electron 32, 18138–18144 (2021). https://doi.org/10.1007/s10854-021-06357-9

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