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High mobility transparent and conducting oxide films of La-doped SrSnO\(_3\)

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Abstract

The synthesis and characterization of high mobility thin films of La-doped SrSnO\(_3\) are reported. The mobility for the \(7\%\) La-doped sample was found to be 228 cm\(^2\)V\(^{-1}\)s\(^{-1}\). The observed high mobility was associated with the reduced carrier effective mass and scattering centers of various scattering mechanisms. The enhancement in mobility and the increase in carrier concentration after doping reduced the resistivities of the thin films by five orders of magnitude. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy revealed that La-dopant and oxygen vacancies donated the electrons in the films. Films were highly transparent \((> 90\%)\) in the visible region. These materials have great potential to be used in optoelectronic and heterostructure devices

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The data that support the findings of this study are available on request from the corresponding author (APS).

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Funding

The authors (YK and APS) wish to acknowledge the UGC-DAE Consortium for Scientific Research, Indore for providing financial support to carry out this work under the CRS project (Ref. No. CSR-IC-267/2017-18/1348).

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Authors and Affiliations

  1. Physics Department, Dr B R Ambedkar National Institute of Technology, Jalandhar, 144 011, India

    Y. Kumar & A. P. Singh

  2. Department of Materials Science and Engineering, National Institute of Technology, Hamirpur, 177 005, India

    R. Kumar

  3. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India

    K. Asokan

  4. UGC DAE Consortium for Scientific Research, Indore, 452001, India

    R. J. Choudhary & D. M. Phase

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Kumar, Y., Kumar, R., Asokan, K. et al. High mobility transparent and conducting oxide films of La-doped SrSnO\(_3\). J Mater Sci: Mater Electron 32, 11835–11844 (2021). https://doi.org/10.1007/s10854-021-05813-w

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