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Fabrication of high-conductivity RGO film at a temperature lower than 1500 ºC by electrical current

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Abstract

Fabricating conductive graphene films by assembling graphene oxide (GO) sheets is highly desired for many applications, however a very high temperature around 3000 K is usually required to repair the sp2 structure for traditional thermal annealing. Here, an electric field assisted Joule heating method was developed to repair the sp2 structure in GO at a temperature lower than 1500 ºC. The resulting free-standing graphene film shows a high electrical conductivity (~ 1840 S/cm) and high C/O ratio (132), both of which are much higher than those of thermally reduced GO films under the same temperature. These findings provide new possibilities for fabricating high-quality graphene films in an energy-efficient and low-cost manner.

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Acknowledgements

This work was financially supported by the National Key R&D Program of China (No. 2020YFA0714900), and the National Natural Science Foundation of China (No. 51971231)

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Authors and Affiliations

  1. Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

    Meijuan Lv, Qinwei Wei, Shuo Cao, Jingdong Guo, Wencai Ren & Huiming Cheng

  2. School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China

    Meijuan Lv, Qinwei Wei, Shuo Cao, Jingdong Guo, Wencai Ren & Huiming Cheng

Authors
  1. Meijuan Lv
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  2. Qinwei Wei
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  3. Shuo Cao
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  4. Jingdong Guo
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  6. Huiming Cheng
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Correspondence to Jingdong Guo.

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Lv, M., Wei, Q., Cao, S. et al. Fabrication of high-conductivity RGO film at a temperature lower than 1500 ºC by electrical current. J Mater Sci: Mater Electron 32, 11727–11736 (2021). https://doi.org/10.1007/s10854-021-05797-7

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  • DOI: https://doi.org/10.1007/s10854-021-05797-7

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