Abstract
Bi3−xCexTi1.5W0.5O9(BTW-xCe,0.00 ≤ x ≤ 0.10) bismuth-layered ceramics were synthesized through a conventional solid-phase reaction process. The impact of Ce ion doping on lattice structures and electrical performance of BTW-xCe ceramic sample has been discussed. All the ceramic samples show a single bismuth-layered structure. Lattice distortion was observed to decrease according to Rietveld structure refinement of XRD patterns. Oxygen vacancies in ceramic grains mainly contribute to the conductivity of samples at high temperature. With the incorporation of Ce dopant, the dielectric loss (tanδ) was decreased and the piezoelectric constant (d33) was enhanced owning to the reduced oxygen vacancy concentration confirmed by an increase of conductance activation energy. The composition of BTW-0.06Ce ceramic exhibits optimal electrical performance with a large d33 of 17.2 pC/N (twice as large as that of undoped BTW), low tanδ of 0.16%, high Tc of 727 °C, and the piezoelectric property has good stability before 600 °C, which shows that the ceramic material has potential application prospect at high temperature.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Nos. 51762024, 51862016, 11947092), the Natural Science Foundation of Jiangxi Province (No. 20192BAB212002, 20192BAB206008), and Foundation of Jiangxi Provincial Education Department (Nos. GJJ190712, GJJ180718, GJJ180739).
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Zeng, R., Jiang, X., Chen, C. et al. Enhanced piezoelectric properties of Ce-doped Bi3Ti1.5W0.5O9 high-temperature Aurivillius piezoceramics. J Mater Sci: Mater Electron 32, 4300–4310 (2021). https://doi.org/10.1007/s10854-020-05173-x
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DOI: https://doi.org/10.1007/s10854-020-05173-x