Abstract
Amorphous lithium niobate (LiNbO3) films with the direct optical bandgap close to the bulk LiNbO3 were fabricated by radio-frequency magnetron sputtering (RFMS) technique in an Ar, Ar(90%) + O2(10%), and Ar(60%) + O2(40%) reactive gas environments. LiNbO3 films synthesized in an Ar(60%) + O2(40%) gas mixture manifest a higher magnitude of the indirect optical bandgap due to a higher defect concentration. The pulsed photon treatment (PPT) leads to the crystallization of the as-grown LiNbO3 films affecting the indirect bandgap Egindir more efficiently compared to the conventional thermal annealing. PPT influences Egindir of the studied films oppositely: it decreases Egindir for the films grown in an Ar and Ar(90%) + O2(10%) environments, whereas Egindir is decreased for the films synthesized in an Ar(60%) + O2(40%) gas mixture after PPT.
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Notes
The targets were fabricated in the Institute of Chemistry and Technology of Rare Elements and Mineral Raw Materials of the Russian Academy of Science (Apatity).
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Acknowledgements
This research was supported by the Russian Foundation for Basic Research (Grant No. 18-29-11062 «Synthesis of lithium niobate films for an elemental basis of opto- acousto- and microelectronic devices»).
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Sumets, M., Belonogov, E., Dybov, V. et al. Pulsed photon treatment effect on the optical bandgap of LiNbO3 films grown by radio-frequency magnetron sputtering method. J Mater Sci: Mater Electron 32, 4290–4299 (2021). https://doi.org/10.1007/s10854-020-05172-y
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DOI: https://doi.org/10.1007/s10854-020-05172-y