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Effects of Deposition Temperature and Hydrogen Plasma on the Properties of the Radio-Frequency Magnetron Sputtering Deposition of ZnO-Al2O3 Films

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Intelligent Technologies and Engineering Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 234))

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Abstract

A 98 mol % ZnO–1 mol % Al2O3 (AZO) compound was sintered at 1,350 °C as a target and deposited on glass substrates using a radio-frequency magnetron (r.f.) sputtering system, under the 30 sccm 98 % Ar + 2 % H2 ambient. The effect of deposition temperature (25–300 °C) on carrier concentration, carrier mobility, resistivity, and optical transmission spectrum of the AZO films was studied. The Burstein-Moss shift was observed and used to prove that defects in the AZO films decreased with increasing deposition temperature. The effect of hydrogen (H2) plasma on carrier concentration, carrier mobility, resistivity, and optical transmission spectrum of the different temperature-deposited AZO films was also studied. The value variations in the optical band gap (E g value) of the AZO films were evaluated from the plots of I = I 0 e −αt, where α 2 = hν − E g. The measured E g value of the as-deposited AZO films increased with increasing deposition temperature and had no apparent trend difference as the H2 plasma was used.

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan, R.O.C.

    Fang-Hsing Wang & Chia-Cheng Huang

  2. Department of Electronic Engineering, Kao Yuan University, Kaohsiung, Taiwan, R.O.C.

    Chien-Chen Diao & Chia-Ching Wu

  3. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, R.O.C.

    Cheng-Fu Yang

Authors
  1. Fang-Hsing Wang
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  2. Chia-Cheng Huang
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  3. Chien-Chen Diao
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  4. Chia-Ching Wu
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  5. Cheng-Fu Yang
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Corresponding author

Correspondence to Cheng-Fu Yang .

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Editors and Affiliations

  1. School of Engineering, Mercer University, 151 Brookefield Drive, Macon, 31210, Georgia, USA

    Jengnan Juang

  2. National Changhua University of Educatio, No. 1, Jin De Road, Changhua City, 500, Taiwan R.O.C.

    Yi-Cheng Huang

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Wang, FH., Huang, CC., Diao, CC., Wu, CC., Yang, CF. (2013). Effects of Deposition Temperature and Hydrogen Plasma on the Properties of the Radio-Frequency Magnetron Sputtering Deposition of ZnO-Al2O3 Films. In: Juang, J., Huang, YC. (eds) Intelligent Technologies and Engineering Systems. Lecture Notes in Electrical Engineering, vol 234. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6747-2_90

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  • DOI: https://doi.org/10.1007/978-1-4614-6747-2_90

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-6746-5

  • Online ISBN: 978-1-4614-6747-2

  • eBook Packages: EngineeringEngineering (R0)

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