Skip to main content
SpringerLink
Log in

Hardness, Raman spectrum, thermal properties, and laser damage threshold of Y3Sc2Ga3O12 single crystal

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Y3Sc2Ga3O12 (YSGG) single crystal has multifunctional applications in the areas of substrate, scintillator, and laser matrix owing to its unique features of structure, thermal, and optical properties. However, the some basic physical and optical properties of YSGG crystal remain unexplored. In this work, the Vickers hardness, Raman spectrum, thermal properties, as well as laser damage threshold of YSGG single crystal were determined for the first time, to the best of our knowledge. The thermal conductivity of YSGG crystal was decreases with the increase of temperature from 298 to 773 K, and the room-temperature thermal conductivity was determined to be 5.76 W m− 1 K− 1. With 355 nm pulse laser illumination, the laser damage threshold of YSGG crystal was determined to be 5.18 J cm−2. Besides, based on the measured Raman spectrum of YSGG crystal, ten Raman vibrations were assigned. The results provide some valuable insight into YSGG crystal, which are important for the further investigation and application of this crystal.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. J.E. Geusic, H.M. Marcos, L.G. Van Uitert, Appl. Phys. Lett. 4, 182 (1964)

    Article  CAS  Google Scholar 

  2. Z. Gao, Z. Jia, K. Wang, X. Liu, L. Bi, G. Wu, Chem. Eng. J. 402, 125951 (2020)

    Article  CAS  Google Scholar 

  3. T. Hou, Z. Jia, A. Feng, Z. Zhou, X. Liu, H. Lv, G. Wu, J. Mater. Sci. Technol. 68, 61 (2021)

    Article  Google Scholar 

  4. S. Ding, H. Wang, W. Liu, J. Luo, Y. Ma, Q. Zhang, J. Lumin. 213, 249 (2019)

    Article  CAS  Google Scholar 

  5. S. Ding, H. Wang, J. Luo, W. Liu, Y. Ma, Q. Zhang, J. Lumin. 214, 116596 (2019)

    Article  CAS  Google Scholar 

  6. S. Ding, W. Liu, X. Tang, Q. Mao, X. Huang, Q. Zhang, J. Lumin. 224, 117322 (2020)

    Article  CAS  Google Scholar 

  7. S. Wang, K. Wu, Y. Wang, H. Yu, H. Zhang, X. Tian, Q. Dai, J. Liu, Opt. Express 21, 16305 (2013)

    Article  Google Scholar 

  8. K. Spariosu, M. Birnbaum, M. Kokta, Appl. Opt. 34, 8272 (1995)

    Article  CAS  Google Scholar 

  9. L. Wang, J. Wang, J. Yang, X. Wu, D. Sun, S. Yin, H. Jiang, J. Wang, C. Xu, Opt. Lett. 38, 2150 (2013)

    Article  CAS  Google Scholar 

  10. B. Lipavsky, Y. Kalisky, Z. Burshtein, Y. Shimony, S. Rotman, Opt. Mater. 13, 117 (1999)

    Article  CAS  Google Scholar 

  11. H. Zhang, Z. Jia, A. Feng, Z. Zhou, L. Chen, C. Zhang, X. Liu, G. Wu, Compos. Part B: Eng. 199, 108261 (2020)

    Article  CAS  Google Scholar 

  12. Y.-N. Xu, W. Ching, B. Brickeen, Phys. Rev. B 61, 1817 (2000)

    Article  CAS  Google Scholar 

  13. N. Kumar, D. Misra, N. Venkataramani, S. Prasad, R. Krishnan, J. Magn. Magn. Mater. 272, E899 (2004)

    Article  Google Scholar 

  14. M. Brahma, V.M. Gaikwad, S. Ravi, Appl. Phys. A 125, 333 (2019)

    Article  CAS  Google Scholar 

  15. D. Sun, J. Luo, Q. Zhang, J. Xiao, W. Liu, S. Wang, H. Jiang, S. Yin, J. Cryst. Growth 318, 669 (2011)

    Article  CAS  Google Scholar 

  16. S. Ding, Q. Zhang, J. Luo, W. Liu, X. Wang, G. Sun, X. Li, D. Sun, Appl. Phys. A 123, 335 (2017)

    Article  Google Scholar 

  17. S. Ding, Q. Zhang, W. Liu, J. Luo, G. Sun, D. Sun, J. Cryst. Growth 483, 110 (2018)

    Article  CAS  Google Scholar 

  18. H. Sun, C. Yu, L. Zheng, F. Yang, Q. Mao, S. Ding, J. Mater. Sci. Mater. Electron. 31, 10260 (2020)

    Article  CAS  Google Scholar 

  19. H. Yang, F. Peng, Q. Zhang, C. Guo, C. Shi, W. Liu, G. Sun, Y. Zhao, D. Zhang, D. Sun, CrystEngComm 16, 2480 (2014)

    Article  CAS  Google Scholar 

  20. S. Ding, W. Liu, Q. Zhang, F. Peng, J. Luo, R. Dou, G. Sun, D. Sun, Appl. Phys. A 123, 70 (2017)

    Article  Google Scholar 

  21. E. Onitsch, Mikroskopie 2, 131 (1947)

    Google Scholar 

  22. J. Koningstein, O.S. Mortensen, J. Mol. Spectrosc. 27, 343 (1968)

    Article  CAS  Google Scholar 

  23. D.G. Ran, H.R. Xia, S. Sun, F.Q. Liu, Z. Ling, W. Ge, H. Zhang, J. Wang, Cryst. Res. Technol. 42, 920 (2007)

    Article  CAS  Google Scholar 

  24. D. Sun, J. Luo, J. Xiao, Q. Zhang, J. Chen, W. Liu, H. Kang, S. Yin, Chin. Phys. Lett. 29, 054209 (2012)

    Article  Google Scholar 

  25. P. Popov, N. Sirota, E. Zharikov, A. Zagumennyi, I. Ivanov, G. Loutts, Laser Phys. 1, 437 (1991)

    Google Scholar 

  26. Q. Hu, H. Nie, W. Mu, Y. Yin, J. Zhang, B. Zhang, J. He, Z. Jia, X. Tao, CrystEngComm 21, 1928 (2019)

    Article  CAS  Google Scholar 

  27. B. Shen, H. Kang, P. Chen, J. Liang, Q. Ma, J. Fang, D. Sun, Q. Zhang, S. Yin, X. Yan, Appl. Phys. B 121, 511 (2015)

    Article  CAS  Google Scholar 

  28. J. Huang, Z. Wu, F. Wang, H. Liu, L. Sun, X. Zhou, X. Ye, Q. Deng, X. Jiang, W. Zheng, Cryst. Res. Technol. 53, 1700269 (2018)

    Article  Google Scholar 

  29. Z. Chen, X. Wang, J. Wang, Y. Hang, Opt. Mater. 46, 12 (2015)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

The University Natural Science Research Project of Anhui Province, China (Grants No. KJ2019ZD06); Natural Science Foundation of Anhui Province (Grants No.2008085QF313); Fund of National Defense Key Science and Technology Laboratory of China (WDYX20614260203) supported this study.

Author information

Authors and Affiliations

  1. School of Science and Engineering of Mathematics and Physics, Anhui University of Technology, Maanshan, 243002, Anhui, People’s Republic of China

    Shoujun Ding, Hao Ren & Hongyuan Li

  2. Key Laboratory on Applied Physics and Chemistry, Shaanxi Applied Physics and Chemistry Research Institute, Xi’an, 710061, Shaanxi, People’s Republic of China

    Aifeng He

  3. Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, 230031, Anhui, People’s Republic of China

    Shoujun Ding

Authors
  1. Shoujun Ding
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hao Ren
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Hongyuan Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Aifeng He
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

Thanks all the co-authors’ contributions for this paper. SD and AH contributed to the writing–reviewing, revising, conceptualization, funding acquisition, and supervision; HR and HL contributed to the writing–reviewing, data curation, and analysis.

Corresponding authors

Correspondence to Shoujun Ding or Aifeng He.

Ethics declarations

Conflict of interest

The authors do not have any conflict of interest.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ding, S., Ren, H., Li, H. et al. Hardness, Raman spectrum, thermal properties, and laser damage threshold of Y3Sc2Ga3O12 single crystal. J Mater Sci: Mater Electron 32, 1616–1622 (2021). https://doi.org/10.1007/s10854-020-04930-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-020-04930-2

Search

Navigation