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Improvement of dielectric properties of ZnO nanoparticles by Cu doping for tunable microwave devices

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Abstract

We report a facile chemical polyol method to synthesize Cu-doped ZnO nanoparticles with various levels of Cu. X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV–Visible diffuse reflectance spectroscopy techniques were used to analyze the structural and optical properties of Zn1−xCuxO nanoparticles. The crystallite size varies between 9.8 and 18.9 nm and decreased with the increase of Cu doping. The band energy gaps of pure and Cu-doped ZnO samples are in the range 2.5–3.1 eV. The dielectric properties, ac conductivity and impedance analysis of Zn1−xCuxO nanoparticles were systematically investigated. It was revealed that the doping of ZnO by Cu (with low Cu molar content) leads to obtain high dielectric constant and low tangent loss, which are very encouraging for microwave semiconductor devices.

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Acknowledgements

This project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, under grant. No. (D-625-130-1441). The authors, therefore, gratefully acknowledge DSR technical and financial supports.

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Authors and Affiliations

  1. Laboratory of Materials Organisation and Properties (LR99ES17), Faculty of Sciences of Tunis, University of Tunis, El Manar, 2092, Tunis, Tunisia

    A. Selmi

  2. Lab of Hetero-Organic Compounds and Nanostructured Materials (LR18ES11), Faculty of Sciences of Bizerte, University of Carthage, 7021, Zarzouna, Tunisia

    A. Fkiri

  3. Department of Physics, Faculty of Sciences, Taif University, Taif, 888, Saudi Arabia

    J. Bouslimi

  4. Department of Engineering Physics and Instrumentation, Institute of Applied Sciences and Technology, Carthage University, Tunis, Tunisia

    J. Bouslimi

  5. Department of Physics, Faculty of Science, King Abdulaziz University, Jedda, Saudi Arabia

    H. Besbes

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Selmi, A., Fkiri, A., Bouslimi, J. et al. Improvement of dielectric properties of ZnO nanoparticles by Cu doping for tunable microwave devices. J Mater Sci: Mater Electron 31, 18664–18672 (2020). https://doi.org/10.1007/s10854-020-04408-1

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