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Properties of ITO thin films rapid thermally annealed in different exposures of nitrogen gas

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Abstract

Indium tin oxide (ITO) thin films were rapid thermal annealed (RTA) for 5 min at a temperature of 550 °C in different exposures of nitrogen gas. Effects of these exposures on the structural, morphological, electrical, and optical properties of these films were investigated using X-ray diffraction, atomic force microscopy and field emission-scanning electron microscopy, four-point probe and hall effect measurements, and ultraviolet–visible-near-infrared (UV–VIS–NIR) spectrophotometer, respectively. The un-exposed RTA ITO films maintained (400) plane preferential orientation similar to the un-annealed sample. However, this plane preferential orientation was reduced relative to (222) plane for exposed RTA sample. The grains and surface roughness parameters were reduced for exposed and enhanced for un-exposed RTA samples as compared to the un-annealed sample. Relatively higher electrical conductivity, average solar transmittance, and bandgap values were observed for ITO films annealed while exposed to nitrogen gas. The exposed RTA ITO films showed sheet resistance of 7.91 Ω sq−1, average solar transmittance of 83%, and bandgap of 3.93 eV. Findings from this study suggest that RTA exposure have the potential to control ITO thin films properties, hence, extending its potential applications.

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Acknowledgement

This work was supported by Mkwawa University College of Education (a constituent college of the University of Dar es Salaam); International Science Program (ISP) and University of Pretoria.

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Authors and Affiliations

  1. Physics Department, Mkwawa University College of Education, P.O. Box 2513, Iringa, Tanzania

    E. R. Ollotu

  2. Physics Department, University of Dar es Salaam, P.O. Box 35063, Dar es Salaam, Tanzania

    N. R. Mlyuka & M. E. Samiji

  3. Department of Physics, University of Pretoria, Private Bag X20, Hatfield, 0028, South Africa

    J. S. Nyarige & M. Diale

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  1. E. R. Ollotu
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  3. N. R. Mlyuka
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Ollotu, E.R., Nyarige, J.S., Mlyuka, N.R. et al. Properties of ITO thin films rapid thermally annealed in different exposures of nitrogen gas. J Mater Sci: Mater Electron 31, 16406–16413 (2020). https://doi.org/10.1007/s10854-020-04192-y

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