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Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

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Abstract

The electrical properties of Ag/Poly(3-hexylthiophene)/Silicon nanowires heterostructure (Ag/P3HT/SiNWs) were investigated. Silicon nanowires (SiNWs) were obtained by metal-assisted chemical etching method in one-step process. P3HT polymer was deposited on SiNWs surfaces by electroless deposition method for different immersion durations (dim). The morphology of SiNWs before and after deposition of P3HT polymer has been examined by scanning electron microscope (SEM). The formation of nanowires as well as the presence of P3HT on their surfaces can be seen in SEM images. Current–voltage (I–V) measurements were carried out on Ag/P3HT/SiNWs by varying dim from 30 to 210 min. The electrical measurements on the different junctions at room temperature showed a rectifying effect. For 30 min, the ideality factor of the Schottky diode was reduced from 4 to 1,4. By using the Cheung method, the diode parameters of the different structures are determined and discussed. The different hetrostructures have been annealed at 100 °C, 200 and 300 °C. The characteristic parameters were calculated as a function of annealing temperature. The optimum temperature for these heterostructures characteristics is 100 °C. The interface states, the trapping levels and the thermal activation of the free carriers are the main factors involved in the conduction phenomenon through Ag/P3HT/SiNWs heterostructures.

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Acknowledgements

The authors would like to thank Dr. Sonia Amdouni and Pr. Rabeh Boukharroub (Univ. Valenciennes, Lille – France) for their help to perform SEM images. The authors acknowledge also Dr. Hosni Ajlani for helpful discussions.

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Authors and Affiliations

  1. Unité de nanomatériaux et photonique, Département de Physique, Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092, El Manar, Tunis, Tunisia

    M. Rahmani & A. Meftah

  2. Institut supérieur d’informatique et de gestion de Kairouan, Université de Kairouan, Avenue Khemais El Alouini, 3100, Kairouan, Tunisia

    M. Rahmani

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  1. M. Rahmani
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  2. A. Meftah
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Correspondence to M. Rahmani.

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Rahmani, M., Meftah, A. Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode. J Mater Sci: Mater Electron 31, 16352–16359 (2020). https://doi.org/10.1007/s10854-020-04185-x

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