Abstract
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda–lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was observed. The conductivity of the film at room temperature was measured as 2.45 × 10−4 (Ω cm)−1 and the temperature dependency of conductivity showed Arrhenius behavior. The dark conductivity profile was modeled by thermionic emission mechanism and activation energies were extracted. In addition, the conductivity values indicated an increasing behavior with illumination intensity applied between 20 and 115 mW/cm2. The heterojunction diode was generated by sputtering ZnTe film on n-Si wafer substrate and the rectification behavior was evaluated to determine the main diode parameters.
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References
S. Adachi, Properties of Group-IV, III-V and II-VI Semiconductors (Wiley, Hoboken, 2005)
M. Afzaal, P. O’Brien, J. Mater. Chem. 16, 1597 (2006)
S.Z. Werta, O.K. Echendu, K.O. Egbo, F.B. Dejene, Thin Solid Films 689, 137511 (2019)
I.M. Dharmadasa, A.A. Ojo, J. Mater. Sci. 28, 16598 (2017)
G. Surucu, H.H. Gullu, O. Bayrakli, M. Parlak, Polytech. 20, 801 (2017)
S.Z. Chen, R.S. Yu, L.G. Song, R.G. Zhang, X.Z. Cao, B.Y. Wang, P. Zhang, Appl. Surf. Sci. 498, 143876 (2019)
H.H. Gullu, O. Bayrakli, D.E. Yildiz, M. Parlak, J. Mater. Sci. 28, 17806 (2017)
M. Hazra, J. Datta, A.C.S. Appl, Mater. Interfaces 11, 40393 (2019)
T. Chen, X. Wang, P. Han, W. Sun, S. Feng, J. Ye, Y. Xu, Y. Zhang, J. Phys. D 52, 455101 (2019)
S. Giraldo, Z. Jehl, M. Placidi, V. Izquierdo-Roca, A. Perez-Rodriguez, E. Saucedo, Adv. Mater. 31, 1806692 (2019)
K. Shen, X.Q. Wang, Y. Zhang, H.B. Zhu, Z.C. Chen, C.Z. Huang, Y.H. Mai, Sol. Energy 201, 55 (2020)
M.A. Green, E.D. Dunlop, J. Hohl-Ebinger, M. Yoshita, N. Kopidakis, A.W.Y. Ho-Baillie, Prog. Photovolt. Res. Appl. 28, 3 (2020)
N. Pandey, B. Kumar, D.K. Dwivedi, Mater. Res. Exp. 6, 096425 (2019)
H.H. Gullu, Optik 178, 45 (2019)
G. Ding, M. Wei, G. Surucu, Z. Liang, X. Wang, Appl. Surf. Sci. 491, 750 (2019)
G. Surucu, K. Colakoglu, E. Deligoz, Y. Ciftci, N. Korozlu, J. Mater. Sci. 46, 1007 (2011)
G. Surucu, K. Colakoglu, E. Deligoz, N. Korozlu, Y.O. Ciftci, Solid State Commun. 150, 1413 (2010)
M. Betelli, N.S. Amade, D. Calestani, B. Garavelli, P. Pozzi, D. Macera, L. Zanotti, C.A. Gonano, M.C. Veale, A. Zapettini, Nucl. Instrum. Meth. A 960, 163663 (2020)
S. Chanda, D. Ghosh, B. Debnath, M. Debbarma, R. Bhattacharjeee, S. Chattopadyaya, Optik 201, 163510 (2020)
D. Ghosh, S. Chanda, B. Debnath, M. Debbarma, R. Bhattacharjee, S. Chattopadhyaya, Phys. B 574, 411669 (2019)
W. Khan, S. Azam, I. Ullah, M. Rani, A. Younus, M. Irfan, P. Czaja, I.V. Kityk, Crystals 9, 247 (2019)
H. Singh, P. Singh, A. Thakur, T. Singh, J. Sharma, Mater. Sci. Semicond. Process. 75, 276 (2018)
H. Singh, M. Singh, J. Singh, B.S. Bansod, T. Singh, A. Thakur, M.F. Wani, J. Sharma, J. Mater. Sci. 30, 3504 (2019)
M. Chaik, S.B. Moumen, A. Agdad, C.M. SambaVall, H. El-Aakib, H. AitDads, A. Outzourhit, L. Essaleh, Phys. B 572, 76 (2019)
K.M.U. Rehman, X. Liu, M. Riaz, Y. Yang, S. Feng, M.W. Khan, A. Ahmad, M. Shezad, Z. Wazir, Z. Ali, K.M. Batoo, S.F. Adil, M. Khan, E.H. Raslan, Phys. B 560, 204 (2019)
S. Ma, K. Li, H. Xu, J. Zhu, H. Zhu, H. Wu, A.C.S. Appl, Mater. Interfaces 11, 39342 (2019)
B. Xiao, M. Zhu, B. Zhang, J. Dong, L. Ji, H. Yu, X. Sun, W. Jie, Y. Xu, Opt. Mater. Express 8, 431 (2018)
U.N. Roy, G.S. Camarda, Y. Cui, R. Gul, A. Hossain, G. Yang, J. Zazvorka, V. Dedic, J. Franc, R.B. James, Sci. Rep. 9, 1620 (2019)
M.G.S.B. Ahamed, V.S. Nagarethinam, A. Thayumanavan, K.R. Murali, C. Sanjeeviraja, M. Jayachandran, J. Mater. Sci. 21, 1229 (2010)
M. Isik, H.H. Gullu, M. Parlak, N.M. Gasanly, Phys. B 582, 411968 (2020)
M. Nishio, K. Saito, Y. Nakatsuru, T. Shono, Y. Matsuo, A. Tomota, T. Tanaka, Q.X. Guo, J. Cryst. Growth 468, 666 (2017)
K. Qin, L. Li, J. Huang, K. Tang, X. Zhang, M. Cao, Y. Shen, L. Wang, Surf. Coat. Tech. 320, 153 (2017)
S. Ulicna, P.J.M. Isherwood, P.M. Kaminski, J.M. Walls, J. Li, C.A. Wolden, Vacuum 139, 159 (2017)
Z.T. Kang, C.J. Summers, H. Menkara, B.K. Wagner, R. Dust, Y. Diawara, G. Mednikova, T. Thorson, Appl. Phys. Lett. 88, 111904 (2006)
L.X. Hung, P.N. Thang, H.V. Nong, N.H. Yen, V.D. Chinh, L.V. Vu, N.T.T. Hien, W.D. de Marcillac, P.N. Hong, N.T. Loan, C. Schwob, A. Maitre, N.Q. Liem, P. Benalloul, L. Coolen, P.T. Nga, J. Electron. Mater. 45, 4425 (2016)
Y.L. Cao, Z.T. Liu, L.M. Chen, Y.B. Tang, L.B. Luo, J.S. Jie, W.J. Zhang, S.T. Lee, C.S. Lee, Opt. Exp. 19, 6100 (2011)
S. Rowtu, L.D.V. Sangani, M.G. Krishna, J. Mater. Electron. Mater. Sci. 47, 1620 (2018)
S.M. Sze, K.N. Kwok, Physics of Semiconductor Devices (Wiley, Hoboken, 2007)
G.K. Rao, K.V. Bangera, G.K. Shivarkumar, Curr. Appl. Phys. 13, 298 (2013)
S. Luo, H. Shen, X. He, Y. Zhang, J. Li, D. Oron, H. Lin, J. Mater. Chem. C 4, 4740 (2016)
A.M. Salem, T.M. Dahy, Y.A. El-Gendy, Phys. B 408, 3027 (2008)
B.D. Cullity, S.R. Stock, Elements of X-ray Diffraction (Prentice Hall, New Jersey, 2001)
M. Birkholz, Thin Film Analysis by X-ray Scattering (Wiley, Weinheim, 2006)
S. Rajpal, S.R. Kumar, Phys. B 534, 145 (2018)
J.C. Irwin, J. Lacombe, J. Appl. Phys. 41, 1444 (1970)
E. Constable, R.A. Lewis, J. Appl. Phys. 112, 063104 (2012)
Y. Du, G. Qiu, Y. Wang, M. Si, X. Xu, W. Wu, P.D. Ye, Nano Lett. 17, 3965 (2017)
R.H. Lyddane, R.G. Sachs, E. Teller, Phys. Rev. 59, 673 (1941)
R.H. Bube, Photoelectronic Properties of Semiconductors (Cambridge University Press, Cambridge, 1992)
F. Aksoy Akgul, G. Akgul, H.H. Gullu, H.E. Unalan, R. Turan, Philos. Magn. 11, 1164 (2015)
L.J. van der Pauw, Philips Tech. Rev. 20, 220 (1958)
E. Coskun, H.H. Gullu, M. Parlak, C. Erçelebi, J. Low Temp. Phys. 178, 162 (2015)
J.Y.W. Seto, J. Appl. Phys. 46, 5247 (1975)
N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1971)
N.V. Joshi, Photoconductivity, Art, Science, and Technology (Marcel Dekker Inc., New York, 1990)
H.H. Gullu, E. Coskun, M. Parlak, Braz. J. Phys. 44, 719 (2014)
D.K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998)
M.A.M. Seyam, H.T. El-Shair, G.F. Salem, Eur. Phys. J. Appl. Phys. 41, 221 (2008)
M. Ozer, D.E. Yildiz, S. Altindal, M.M. Bulbul, Solid State Electron. 51, 941 (2007)
M. Kaleli, M. Parlak, C. Ercelebi, Semicond. Sci. Technol. 26, 105013 (2011)
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Gullu, H.H., Surucu, O.B., Isik, M. et al. Material and Si-based diode analyses of sputtered ZnTe thin films. J Mater Sci: Mater Electron 31, 11390–11397 (2020). https://doi.org/10.1007/s10854-020-03688-x
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DOI: https://doi.org/10.1007/s10854-020-03688-x