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Effect of annealing temperature on physical and electrical properties of solution-processed polycrystalline In2Ga2ZnO7 thin film

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Abstract

Influence of annealing temperature on the properties of In2Ga2ZnO7 (IGZO) thin film prepared using sol–gel method was extensively studied. Annealing treatment at four different temperatures (300, 500, 700 and 900 °C) has transformed the amorphous IGZO to polycrystalline IGZO. The increase in annealing temperature to 900 °C encouraged the formation of interfacial layer on the underlying Si substrate. As a result, a decrement in film current conductivity was perceived and the sample annealed at 900 °C was determined as the closest to having insulating properties. More characterization regarding the structural, morphological and optical characteristics of the annealed films was discussed in this study.

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Acknowledgements

The authors gratefully acknowledge the support from Malaysia Ministry of Education (MOE) under LRGS (Wide Band Gap Semiconductor), Project No: 203/CINOR/6720013.

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  1. Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia

    Nabihah Kasim, Zainuriah Hassan, Way Foong Lim & Hock Jin Quah

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Kasim, N., Hassan, Z., Lim, W.F. et al. Effect of annealing temperature on physical and electrical properties of solution-processed polycrystalline In2Ga2ZnO7 thin film. J Mater Sci: Mater Electron 31, 9705–9718 (2020). https://doi.org/10.1007/s10854-020-03516-2

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