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Impact of atomic vacancy on phase change and structure in GexTe1−x films

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Abstract

Binary compound Ge–Te, which displays intriguing functionalities, has been intensively studied from both fundamental and technological perspectives. In Ge–Te compound, a deviation from the Ge–Te stoichiometry will lead it thermodynamically unstable as well as to the change in the phase change characters. In this study, a series of non-stoichiometric Ge–Te films were prepared and a detailed study on the impact of Ge vacancy was carried out. The phase change characters can be tuned by adjusting the composition. Although the Ge vacancy does not lead to phase separation and Te precipitation in these films, Raman spectroscopy analysis reveals a dramatic change in the bonding environment. The microstructure has been modified by the induced Ge vacancy, especially the threefold Te unit and Ge–Ge bond in the crystalline GeTe.

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Acknowledgements

This work was supported by Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJB510025) and Changzhou Science and Technology Bureau (CJ20180054).

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Authors and Affiliations

  1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213001, China

    Jianzhong Xue, MingXu Pei, Yongxing Sui, Xiaoqing Zhu, Weihua Wu & Long Zheng

  2. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China

    Long Zheng

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  1. Jianzhong Xue
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  2. MingXu Pei
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  3. Yongxing Sui
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Correspondence to Long Zheng.

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Xue, J., Pei, M., Sui, Y. et al. Impact of atomic vacancy on phase change and structure in GexTe1−x films. J Mater Sci: Mater Electron 31, 5936–5940 (2020). https://doi.org/10.1007/s10854-020-03158-4

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  • DOI: https://doi.org/10.1007/s10854-020-03158-4

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