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Enhancement of thermoelectric performances of BiCuSeO through Y doping and grain refining

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Abstract

Thermoelectric properties of BiCuSeO oxyselenide ceramics were improved combining Y doping and grain refinement. Bi1−xYxCuSeO (x = 0, 0.02, 0.04, 0.06, 0.08, 0.10) (called as BYCSO below) samples were prepared by mechanical alloying and resistance pressing sintering (RPS). The testing results indicate that Y doping can increase the carrier concentration and electrical conductivity, increase the thermal conductivity. On the basis of Y doping, grain refinement by increasing ball milling strength was indicated to increase the concentration of Cu vacancies, which enhanced the electrical conductivity and power factor, and reduce the thermal conductivity. Finally, the ZT value is increased to 0.93, which is 98% higher than that of the pure sample.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (51674181).

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Authors and Affiliations

  1. The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, 430081, China

    Bo Feng, Guangqiang Li, Xiaoming Hu, Peihai Liu, Rusong Li, Yanglin Zhang, Yawei Li, Zhu He & Xi’an Fan

  2. National-Provincial Joint Engineering Research Center of High Temperature Materials and Lining Technology, Wuhan University of Science and Technology, Wuhan, 430081, China

    Bo Feng, Guangqiang Li, Xiaoming Hu, Peihai Liu, Rusong Li, Yanglin Zhang, Yawei Li, Zhu He & Xi’an Fan

  3. Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, 430081, China

    Bo Feng, Guangqiang Li, Xiaoming Hu, Peihai Liu, Rusong Li, Yanglin Zhang, Yawei Li, Zhu He & Xi’an Fan

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  1. Bo Feng
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Correspondence to Xi’an Fan.

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Feng, B., Li, G., Hu, X. et al. Enhancement of thermoelectric performances of BiCuSeO through Y doping and grain refining. J Mater Sci: Mater Electron 31, 4915–4923 (2020). https://doi.org/10.1007/s10854-020-03056-9

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  • DOI: https://doi.org/10.1007/s10854-020-03056-9

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