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Design of \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructures using glancing angle deposition technique for enhanced photodetection

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Abstract

Glancing angle deposition technique was employed to fabricate \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructure on n-type Si substrate. The X-ray diffraction analysis depicts that the \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructure was polycrystalline in nature. Higher photoluminescence intensity was obtained for \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructure as compared to bare \(\text {SnO}_{2}\) nanowires, due to the higher junction area between two layers and higher electron–hole pair generation. The photodetectors fabricated using \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructure showed averagely 2.3 times higher photoresponse as compared to bare \(\text {SnO}_{2}\) nanowire photodetector at \(-2\) V. The enhanced photoresponse for \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructure was described with reference to the interface junction. A high responsivity of 16.43 A/W and high detectivity of \({2.58}\times {10}^{{12}}\) jones with noise equivalent power as low as \({1.085}\times {10}^{-12}\) W were obtained for \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructure. Moreover, the current conduction mechanism of \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructure was explained with the help of the band diagram.

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Acknowledgements

The authors would like to acknowledge SAIF NEHU, Shillong, India for TEM analysis and NCPRE LAB, IIT Bombay, India for FESEM analysis. The authors would also like to thank CSIR Jorhat, India for providing PL measurement facility, Dr. Debarun Dhar Purkayasta, Department of Physics, NIT Nagaland, India for providing optical absorption measurement facility, department of physics NIT Nagaland for providing XRD measurement facility, and National Institute of Technology Nagaland for financial support.

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  1. Department of Electrical and Electronics Engineering, National Institute of Technology Nagaland, Dimapur, India

    Sarita Panigrahy

  2. Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur, India

    Jay Chandra Dhar

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  1. Sarita Panigrahy
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Correspondence to Jay Chandra Dhar.

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Panigrahy, S., Dhar, J.C. Design of \(\text {Er}_{2}\text {O}_{3}\)-capped \(\text {SnO}_{2}\) nanostructures using glancing angle deposition technique for enhanced photodetection. J Mater Sci: Mater Electron 31, 4780–4787 (2020). https://doi.org/10.1007/s10854-020-03035-0

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