Abstract
We report synthesis, characterization and IR photoresponse properties of 150 ± 10 nm thick high quality VO2(M1) thin films synthesized by DC reactive sputtering. Phase formation was confirmed by X-ray diffraction and Raman spectroscopic measurements. Morphology and microstructure were analysed by atomic force microscope, scanning electron microscope and transmission electron microscope which revealed polycrystalline nature of nanosized films with root mean square (rms) roughness value of 8 ± 0.7 nm. Electrical measurements revealed 1st order transition of thin films with a change in resistance of more than two orders of magnitude and temperature coefficient of resistance, TCR of − 1.24% K−1 at 30 °C. The fabricated VO2(M1) IR photodetector exhibited excellent reproducible photoresponse properties when subjected to a 1064 nm laser under 250 mW cm−2 power density with a bias voltage of 5 V at the ambient conditions of temperature and pressure. The sensitivity, responsivity, external quantum efficiency and specific detectivity were observed to be 1775%, 40.09 mA W−1, 4.67% and 7.07 × 1011 Jones, respectively.
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Acknowledgements
Authors greatly acknowledge Division of Chemical Sciences, Indian Institute of Science, Bengaluru for providing TEM facility. Micro and Nano Characterization Facility (MNCF) at Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bengaluru is highly acknowledged for providing XPS facility. The authors would also like to thank FIST for providing funds for XRD facilities. Inyalot Jude Tadeo offers heartfelt gratitude to the Office of International Relations (OIR), Indian Institute of Science, Bengaluru for granting him Ph.D. scholarship. Devanshi Bhardwaj thanks CSIR for providing Ph.D. scholarship. Saluru B. Krupanidhi acknowledges Fellowship Grant from Indian National Science Academy.
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Tadeo, I.J., Bhardwaj, D., Sheela, D. et al. Highly photoresponsive VO2(M1) thin films synthesized by DC reactive sputtering. J Mater Sci: Mater Electron 31, 4687–4695 (2020). https://doi.org/10.1007/s10854-020-03023-4
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DOI: https://doi.org/10.1007/s10854-020-03023-4