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Electron bistability and switching effects in Mo/p-CdTe/Mo structure

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Abstract

It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage of more than 20 V. It was established that after the breakdown under static voltage, the structure irreversibly goes into a state with high electrical conductivity. At the same time, sections with negative differential resistance and negative differential conductivity appear on its low-frequency current–voltage characteristics at voltages less than 1 V. The most probable physical mechanisms that can provide such current–voltage characteristics are considered.

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Authors and Affiliations

  1. National Technical University “Kharkiv Polytechnic Institute”, 2 Kyrpychova St., Kharkiv, 61002, Ukraine

    G. S. Khrypunov, V. O. Nikitin, O. L. Rezinkin, A. N. Drozdov, A. V. Meriuts, M. G. Khrypunov, M. V. Kirichenko & A. R. Danyliuk

  2. National University of Civil Defence of Ukraine, 94 Chernyshevskaya St., Kharkiv, 61023, Ukraine

    O. V. Pirohov

Authors
  1. G. S. Khrypunov
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  2. V. O. Nikitin
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  3. O. L. Rezinkin
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  4. A. N. Drozdov
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  5. A. V. Meriuts
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  6. O. V. Pirohov
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  7. M. G. Khrypunov
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  8. M. V. Kirichenko
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  9. A. R. Danyliuk
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Correspondence to A. N. Drozdov.

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Khrypunov, G.S., Nikitin, V.O., Rezinkin, O.L. et al. Electron bistability and switching effects in Mo/p-CdTe/Mo structure. J Mater Sci: Mater Electron 31, 3855–3860 (2020). https://doi.org/10.1007/s10854-020-02926-6

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  • DOI: https://doi.org/10.1007/s10854-020-02926-6

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