Correction to: Dielectric relaxation and thermally activated a.c. conduction in (PVDF)/(rGO) nano-composites: role of rGO over different fillers

Correction to: Journal of Materials Science: Materials in Electronics (2018) 29:18271–18281 https://doi.org/10.1007/s10854-018-9941-z

Unfortunately, the original version of this article has been published with error in Abstract, Table 1, Sect. 3.5 and Figs. 5 and 9.

This has been corrected by publishing this correction article.

The corrections are given below:

In the third sentence of the abstract, “The dielectric measurements of PVDF/rGO nano-composites show a high dielectric constant and low dielectric loss factor.” should be written as “The dielectric measurements of PVDF/rGO nano-composites show a high dielectric constant and high dielectric loss factor at lower frequency where its values decrease with increasing frequency.”

Table 1 given in the original version has now been corrected in this erratum (Table 1).

Table 1 Variation of the activation energy ΔE_ac and the relaxation time τ_m with rGO content

Figure 5 in the original version has now been corrected in this erratum (Fig. 5).

Fig. 5

Plots of logσ and logf for all nano-composites at 363 K

In Sect. 3.5 (Effect of the temperature on the dielectric behavior of the PVDF/rGO films) of the original version, “it is observed that the value of exponent s lies in the range 0.18–0.74, which is less than unity” should be written as “It is observed that the value of exponent s lies in the range 0.74–0.18 which is less than unity.”

Figure 9 in the original version has now been corrected in this erratum (Fig. 9).

Fig. 9

a ln ω-dependent σ_ac of the PVDF–1.8 vol% rGO nano-composite films at different temperatures. b The dependence of s on temperature