Abstract
In this manuscript, we reported the electrical characteristics and structural analysis of In/Fe3O4/SiO2/n-Si/In MIS-type SBD heterostructure comprehensively in the temperature range 10–300 K using I–V, XRD, TEM and AFM measurements. Pulsed laser deposition in association with DC magnetron sputtering techniques has been utilized to fabricate the proposed In/Fe3O4/SiO2/n-Si/In heterojunction. The fabricated heterojunction revealed that the I–V curves are non-linear and asymmetric in nature. Using these I–V curves in the forward-bias region, SBH is calculated as 0.02 eV at 10 K and 0.74 eV at 300 K. On the other hand, the ideality factor (n) value was calculated as 7.55 at 10 K and 1.37 at 300 K. The series resistance (RS) values were also evaluated using Chenug’s method and the values were 1121 Ω at 10 K and 334 Ω at 300 K. The dependence of important diode parameters such as SBH, ‘n’ and ‘RS’ on measurement temperature was effectively explained firstly on account of triple Gaussian distribution of barrier heights with the help of barrier inhomogeneities of the prepared heterojunction. The value of the Richardson’s constant calculated for the fabricated In/Fe3O4/SiO2/n-Si/In heterojunction in the 110–300 K temperature regime was calculated to be 115.26 A/cm2K2 and is approximately equal to the theoretical value of 120 A/cm2K2 for n-type Si. In addition, the higher value (greater than one) of ideality factor at all operating temperatures from 10–300 K demonstrated that the probable current transport across the Fe3O4/SiO2/n-Si junction is not only due to the thermionic emission (TE) mechanism. Hence, to reveal the origin of current transport mechanism i.e., other than TE, we noticed that the governing current transport process through the fabricated hetrojunction is mainly due to the tunneling assisted Poole–Frenkel class of emission across the Fe3O4/SiO2/n-Si junction which is found to be temperature-dependent.
Similar content being viewed by others
References
A.R. Deniz, Z. Caldiran, Y. Sahin, M. Sinoforoglu, O. Metin, K. Meral, S. Aydogan, The synthesis of the Fe3O4 nanoparticles and the analysis of the current–voltage measurements on Au/Fe3O4/p-Si schottky contacts in a wide temperature range. Metall. Mater. Trans. A 44A, 3809–3814 (2013)
M. Sharma, S.K. Tripathi, Study of barrier inhomogeneities in I-V-T and C-V-T characteristics of Al/Al2O3/PVA:n-ZnSe metal-oxide-semiconductor diode. J. Appl. Phys. 112, 024521 (2012)
S.A. Yerişkin, M. Balbaş, I. Orak, The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J Mater Sci. (2017). https://doi.org/10.1007/s10854-017-7255-1
A. Kaya, E. Marıl, S. Altındal, I. Usluc, The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature. Microelectron. Eng. 149, 166–171 (2016)
Y. Cui, Y. Tian, W. Liu, Y. Li, R. Wang, T. Wu, Interface-dependent rectifying TbMnO3-based heterojunctions. AIP Adv. 1, 042129 (2011)
H. Li, L. Duan, Y. Qiu, Mechanisms of charge transport in transition metal oxide doped organic semiconductors. J. Phys. Chem. C 118, 29636–29642 (2014)
A. Tataroglu, F.Z. Pur, The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes Phys. Scr. 88, 015801 (2013)
C. Bilkan, Y. Badali, S.F. Shablou, Y.A. Kalandaragh, S. Altındal, On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2-PVA/n-Si Schottky barrier diodes. Appl. Phys. A 123, 560 (2017)
F. Cattaruzza, D. Fiorani, A. Flamini, P. Imperatori, G. Scavia, L. Suber, A.M. Testa, Magnetite nanoparticles anchored to crystalline silicon surfaces. Chem. Mater. 17, 3311–3316 (2005)
S. Galvez, R. Zuazo, S. Colera et al., Sharp chemical interface in epitaxial Fe3O4 thin films. Appl. Phys. Lett. 105, 241603 (2014)
A.R. Deniz, Z. Caldıran, O. Metin, K. Meral, S. Aydogan, The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range. J. Colloid Interface Sci. 473, 172–181 (2016)
S. Ghosh, P.C. Srıvastava, Interface states of Fe3O4/Si interfacial structure and effect of magnetic field. J. Electron. Mater. 43, 11 (2014)
K. Yang, D.H. Kim, J. Dho, Schottky barrier effect on the electrical properties Fe3O4/ZnO and Fe3O4/Nb: SrTiO3 heterostructures. J. Phys. D Appl. Phys. 44, 355301–355306 (2011)
L.B. Zhao, W.B. Mi, E.Y. Jiang, H.L. Bai, Spin-polarized transport of electrons from polycrystalline Fe3O4 to amorphous Si. Appl. Phys. Lett. 91, 052113 (2007)
P.L. Lang, Y.G. Zhao, C.M. Xiong, J. Li, D.N. Zheng, The rectifying property and magnetoresistance of La0.67Ca0.33MnO3/SiO2/Si heterojunction. J. Appl. Phys. 100, 053909 (2006)
T.L. Qu, Y.G. Zhao, H.F. Tian, C.M. Xiong, S.M. Guo, J.Q. Li, Rectifying property and giant positive magnetoresistance of Fe3O4/SiO2/Si heterojunction. Appl. Phys. Lett. 90, 223514 (2007)
V.A. Vikulov, A.A. Dimitriev, V.V. Balashev, T.A. Pisarenko, A.M. Maslov, V.V. Korobtsov, Electrical transport features in Fe3O4/SiO2/n-Si hybrid structure. Solid State Phenomena. 213, 56–59 (2014)
V.A. Vikulov, A.A. Dimitriev, V.V. Balashev, T.A. Pisarenko, V.V. Korobtsov, Low -temperature conducting channel switching in hybrid Fe3O4/SiO2/n-Si structures. Mater. Sci. Eng. B 211, 33 (2016)
H. Qin, C.M. Wang, Q.Q. Dong, L. Zhang, X. Zhang, Z.Y. Ma, Q.R. Han, Preparation and characterization of magnetic Fe3O4–chitosan nanoparticles loaded with isoniazid. J. Magn. Magn. Mater. 381, 120–126 (2015)
S.H. Chaki, T.J. Malek, M.D. Chaudhary, J.P. Tailor, M.P. Deshpande, Magnetite Fe3O4 nanoparticles synthesis by wet chemical reduction and their characterization. Adv. Nat. Sci. 6, 035009 (2015)
E.H. Rhoderick, R.H. Williams, Metal-semiconductor contacts, 2nd edn. (Clarendon Press, Oxford, 1988)
M.A. Yeganeh, S.H. Rahmatollahpur, Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes. J. Semicond. 31, 074001 (2010)
S. Mahato, D. Biswas, L.G. Gerling, C. Voz, J. Puigdollers, Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode. AIP Adv. 7, 085313 (2017)
U. Parihar, J. Ray, C.J. Panchal, N. Padha, Influence of temperature on Al/p-CuInAlSe2 thin-film Schottky diodes. Appl. Phys. A 122, 568 (2016)
S.K. Cheung, N.W. Cheung, Extraction of schottky diode parameters from forward current–voltage characteristics. Appl. Phys. Lett. 49, 85–87 (1986)
H. Norde, A modified forward I–V plot for Schottky diodes with high series resistance. J. Appl. Phys. 50, 5052–5053 (1979)
R.T. Tung, Electron transport at metal-semiconductor interfaces: general theory. Phys. Rev. B 45, 13509 (1992)
C.A. Dimitriadis, S. Logothetidis, I. Alexandrou, Schottky barrier contacts of titanium nitride on n-type silicon. Appl. Phys. Lett. 66, 502 (1995)
O. Demircioglu, S. Karatas, N. Yıldırım, O.F. Bakkaloglu, A. Turut, Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si. J. Alloys Compd. 509, 6433–6439 (2011)
R. Kumar, S. Chand, Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature. Solid-State Sci. 58, 115–121 (2016)
K. Moraki, S. Bengi, S. Zeyrek, M.M. Bulbul, S. Altındal, Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range. J. Mater. Sci. 28, 3987–3996 (2017)
V.R. Reddy, N.N.K. Reddy, Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies. Superlattices Microstruct. 52, 484–499 (2012)
A. Bobby, S. Verma, K. Asokan, P.M. Sarun, B.K. Antony, Phase transition induced double-Gaussian barrier height distribution in Schottky diode. Phys. B 431, 6–10 (2013)
C. Bilkan, Y. Badali, S.F. Shablou, Y.A. Kalandaragh, S. Altındal, On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2-PVA/n-Si Schottky barrier diodes. Appl. Phys. A 123, 560 (2017)
A. B. Ulusan, A. Tataroglu, Y. A. Kalandaragh, S. Altındal, On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current-voltage-temperature (I-V-T) characteristics, J Mater Sci:Mater Electron, https://doi.org/10.1007/s10854-017-7900-8
S. Dogan, S. Duman, B. Gurbulak, S. Tuzemen, H. Morkoc, Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes. Physica E 41, 646–651 (2009)
A. Akkaya, E. Ayyıldiz, Effects of post annealing on I-V-T characteristics of (Ni/Au)/Al0.09Ga0.91N Schottky barrier diodes. J. Phys. (2016). https://doi.org/10.1088/1742-6596/707/1/012015
N.N.K. Reddy, V.R. Reddy, Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements. Bull. Mater. Sci. 35, 53–61 (2012)
S.D. Ganichev, E. Ziemann, W. Prettl, I.N. Yassievich, A.A. Istratov, E.R. Weber, Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors. Phys. Rev. B 61, 10361 (2000)
G. Chakraborty, S. Chattopadhyay, C.K. Sarkar, C.J. Pramanik, Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures. J. Appl. Phys. 101, 024315 (2007)
L. Tsybeskov, G.F. Grom, P.M. Fauchet, J.P.M. Caffrey, J.-M. Baribeau, G.I. Sproule, D.J. Lockwood, Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices. Appl. Phys. Lett. 75, 2265 (1999)
J. Panda, S. Chattopadhyay, T.K. Nath, Temperature dependent spin injection properties of the Ni nanodots embedded metallic TiN matrix and p-Si heterojunction. Thin Solid Films 546, 211–218 (2013)
J. Panda, T.K. Nath, Spin transport and temperature-dependent giant positive junction magnetoresistance in CoFeO/SiO/p-Si heterostructure. Appl. Phys. A 122, 1–10 (2016). https://doi.org/10.1007/s00339-015-9521-5
J. Panda, S.N. Saha, T.K. Nath, Room temperature giant positive junction magnetoresistance of NiFe2O4/n-Si heterojunction for spintronics application. Physica B 488, 184–187 (2014)
A. Ilie, B. Equer, Field-enhanced generation in hydrogenated amorphous silicon. Phys. Rev. B 57, 15349 (1998)
Acknowledgements
Dr. Nallabala Nanda Kumar Reddy thankfully acknowledges the financial support from the Department of Science and Technology (DST), Science and Engineering Research Board, Government of India, project No. ECR/2017/002868, the Management of Madanapalle Institute of Technology and Science (MITS, Madanapalle, A.P, India) and V.R. Technologies, Bangalore for their extended technical support. Dr. S. V. Prabhakar Vattikuti thankfully acknowledges the funding from the National Research Foundation of Korea (NRF) and Funded by the Ministry of Science, ICT, and Future Planning (2017R1A2B1004860). Dr. Kesarla Mohan Kumar greatly acknowledge the financial support from the University Grants Commission (UGC), Government of India, MRP project No. 6396/16 (SERO/UGC).
Author information
Authors and Affiliations
Corresponding authors
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Nanda Kumar Reddy, N., Godavarthi, S., Mohan Kumar, K. et al. Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal–insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range. J Mater Sci: Mater Electron 30, 8955–8966 (2019). https://doi.org/10.1007/s10854-019-01223-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-01223-1