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ZnO based transparent thin film transistor grown by aerosol assisted CVD

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Abstract

The communication reports the characterization of n\(^+\)-Al:ZnO/Al\(_2\)O\(_3\)/n-ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system. UV–VIS spectroscopy yields the bandgap energies of ZnO and Al:ZnO thin films as 3.30 and 3.34 eV, respectively. The average optical transmittance of the TFT is found to be around 77%. The TFT has a double top gate structure with Al:ZnO thin film as gate, source and drain terminals, ZnO thin film as channel layer while Al\(_2\)O\(_3\) acts as the dielectric layer. Transfer and output characteristics of the TFT have been measured to study the variation of threshold voltage, current On/Off ratio, saturation field effect mobility and subthreshold swing parameters as functions of drain-to-source voltage. The present work establishes the good quality indigenous fabrication of p-channel TFT using AACVD system with results agreeing very well with the results available in the literature.

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Acknowledgements

Several discussions with Dr. Tapas Ganguli of Raja Ramanna Center for Advanced technology, Indore-India are gratefully acknowledged.

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Authors and Affiliations

  1. Department of Applied Physics & Optoelectronics, Shri G. S. Institute of Technology and Science, Indore, 452 003, India

    Vipin K. Kaushik & P. K. Sen

  2. Optical Coatings Development Laboratory, RRCAT, Indore, 452 013, India

    C. Mukherjee

  3. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400 094, India

    C. Mukherjee

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  1. Vipin K. Kaushik
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  3. P. K. Sen
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Correspondence to Vipin K. Kaushik.

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Kaushik, V.K., Mukherjee, C. & Sen, P.K. ZnO based transparent thin film transistor grown by aerosol assisted CVD. J Mater Sci: Mater Electron 29, 15156–15162 (2018). https://doi.org/10.1007/s10854-018-9657-0

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  • DOI: https://doi.org/10.1007/s10854-018-9657-0

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